TY - JOUR
T1 - Optical and electrical study of cap layer effect in QHE devices with double-2DEG
AU - Zamora-Peredo, L.
AU - Cortes-Mestizo, I.
AU - García-Gonzáez, L.
AU - Hernández-Torres, J.
AU - Hernandez-Quiroz, T.
AU - Peres-Caro, M.
AU - Ramirez-López, M.
AU - Martinez-Veliz, I.
AU - Casallas-Moreno, Y. L.
AU - Gallardo-Hernández, S.
AU - Conde-Gallardo, A.
AU - López-López, M.
N1 - Funding Information:
Zamora-Peredo L. 1 * Cortes-Mestizo I. 1 García-Gonzáez L. 1 Hernández-Torres J. 1 Hernandez-Quiroz T. 1 Peres-Caro M. 2 Ramirez-López M. 2 Martinez-Veliz I. 2 Casallas-Moreno Y. L. 2 Gallardo-Hernández S. 2 Conde-Gallardo A. 2 López-López M. 2 1 Centro de Investigación en Micro y Nanotecnología , Universidad Veracruzana , Calzada Adolfo Ruiz Cortines # 455 , Fracc. Costa Verde , C.P. 94292 , Boca del Río , Veracruz , México. 2 Departamento de Física , Centro de Investigaciones y de Estudios Avanzados - IPN , México D. F. , México * Email: luiszamora@uv.mx 2013 1617 Symposium 7E – Low-Dimensional Semiconductor Structures 31 36 Copyright © Materials Research Society 2013 2013 Materials Research Society
PY - 2013
Y1 - 2013
N2 - In this work we report on the characteristics of GaAs/AlGaAs heterostructures with a symmetric double two-dimensional electron gas (D-2DEG). Optical characterization was made by room temperature photoreflectance (PR) spectroscopy as well as electrical properties were determinated using the quantum Hall effect measurements at 2K. In order to study the surface effects on the conduction band profile, three samples with different GaAs cap layer thickness (25, 60 and 80 nm) were grown by the molecular beam epitaxy. Photoreflectance spectra at room temperature show the wide-period Franz-Keldysh oscillations between 1.42 and 1.70 eV originated by the surface electric field. The analysis of these oscillations shows that the surface electric field varies from 503 to 120 kV/cm whereas the thickness of the cap layer increases that was produced by the reduction of the depletion zone near the surface. Using QHE measurements we found that electron density increases if the surface electric field decreases.
AB - In this work we report on the characteristics of GaAs/AlGaAs heterostructures with a symmetric double two-dimensional electron gas (D-2DEG). Optical characterization was made by room temperature photoreflectance (PR) spectroscopy as well as electrical properties were determinated using the quantum Hall effect measurements at 2K. In order to study the surface effects on the conduction band profile, three samples with different GaAs cap layer thickness (25, 60 and 80 nm) were grown by the molecular beam epitaxy. Photoreflectance spectra at room temperature show the wide-period Franz-Keldysh oscillations between 1.42 and 1.70 eV originated by the surface electric field. The analysis of these oscillations shows that the surface electric field varies from 503 to 120 kV/cm whereas the thickness of the cap layer increases that was produced by the reduction of the depletion zone near the surface. Using QHE measurements we found that electron density increases if the surface electric field decreases.
KW - GaAs/AlGaAs
KW - electrical properties
KW - optical properties
UR - http://www.scopus.com/inward/record.url?scp=84899504410&partnerID=8YFLogxK
U2 - 10.1557/opl.2013.1160
DO - 10.1557/opl.2013.1160
M3 - Artículo de la conferencia
AN - SCOPUS:84899504410
SN - 0272-9172
VL - 1617
SP - 31
EP - 36
JO - Materials Research Society Symposium Proceedings
JF - Materials Research Society Symposium Proceedings
T2 - 22nd International Materials Research Congress, IMRC 2013
Y2 - 11 August 2013 through 15 August 2013
ER -