On the dielectric and ferroelectric properties of Ba 0.75Sr 0.25TiO 3 thin films deposited by RF Sputtering

Juana E. Mancilla; Jesús N. Rivera; Carlos A. Hernández; Martín G. Zapata

On the dielectric and ferroelectric properties of Ba _0.75Sr _0.25TiO ₃ thin films deposited by RF Sputtering

Juana E. Mancilla, Jesús N. Rivera, Carlos A. Hernández, Martín G. Zapata

Escuela Superior de Ingeniería Mecánica y Eléctrica (ESIME), Unidad Azcapotzalco

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The ferroelectric behavior of Ba _0.75Sr _0.25TiO ₃ (BST) thin films deposited on nichrome substrates by RF-Sputtering sintered in situ at 673-1023 K temperature range has been studied. The thin films microstructures were observed using atomic force microscopy to determine rugosity and grain size. Extensive grain growth was observed at temperatures of 822 and 1023 K, varying from 75 to 95 nm, respectively. The ferroelectric properties were determined by the hysteresis loops applying an electric field of 100 kV/cm. The films sintered in the temperature range of 822-1023 K show a reduction of the remnant polarization Pr from 9.87 °C/cm ² to 2.23 °C/cm ², and the coercive field strength E _c decrease from 57.75 kV/cm ² to 19.85 kV/cm ². In situ heat treatments let to have more uniform grain size distribution, and relative low rugosities.

Original language	English
Pages (from-to)	223-226
Number of pages	4
Journal	Journal of the Australian Ceramic Society
Volume	48
Issue number	2
State	Published - 2012

Keywords

BST thin film
Dielectric constant
Ferroelectric properties
In situ heat treatment
RF sputtering

Cite this

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title = "On the dielectric and ferroelectric properties of Ba 0.75Sr 0.25TiO 3 thin films deposited by RF Sputtering",

abstract = "The ferroelectric behavior of Ba 0.75Sr 0.25TiO 3 (BST) thin films deposited on nichrome substrates by RF-Sputtering sintered in situ at 673-1023 K temperature range has been studied. The thin films microstructures were observed using atomic force microscopy to determine rugosity and grain size. Extensive grain growth was observed at temperatures of 822 and 1023 K, varying from 75 to 95 nm, respectively. The ferroelectric properties were determined by the hysteresis loops applying an electric field of 100 kV/cm. The films sintered in the temperature range of 822-1023 K show a reduction of the remnant polarization Pr from 9.87 °C/cm 2 to 2.23 °C/cm 2, and the coercive field strength E c decrease from 57.75 kV/cm 2 to 19.85 kV/cm 2. In situ heat treatments let to have more uniform grain size distribution, and relative low rugosities.",

keywords = "BST thin film, Dielectric constant, Ferroelectric properties, In situ heat treatment, RF sputtering",

author = "Mancilla, {Juana E.} and Rivera, {Jes{\'u}s N.} and Hern{\'a}ndez, {Carlos A.} and Zapata, {Mart{\'i}n G.}",

year = "2012",

language = "Ingl{\'e}s",

volume = "48",

pages = "223--226",

journal = "Journal of the Australian Ceramic Society",

issn = "0004-881X",

publisher = "Springer International Publishing AG",

number = "2",

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TY - JOUR

T1 - On the dielectric and ferroelectric properties of Ba 0.75Sr 0.25TiO 3 thin films deposited by RF Sputtering

AU - Mancilla, Juana E.

AU - Rivera, Jesús N.

AU - Hernández, Carlos A.

AU - Zapata, Martín G.

PY - 2012

Y1 - 2012

N2 - The ferroelectric behavior of Ba 0.75Sr 0.25TiO 3 (BST) thin films deposited on nichrome substrates by RF-Sputtering sintered in situ at 673-1023 K temperature range has been studied. The thin films microstructures were observed using atomic force microscopy to determine rugosity and grain size. Extensive grain growth was observed at temperatures of 822 and 1023 K, varying from 75 to 95 nm, respectively. The ferroelectric properties were determined by the hysteresis loops applying an electric field of 100 kV/cm. The films sintered in the temperature range of 822-1023 K show a reduction of the remnant polarization Pr from 9.87 °C/cm 2 to 2.23 °C/cm 2, and the coercive field strength E c decrease from 57.75 kV/cm 2 to 19.85 kV/cm 2. In situ heat treatments let to have more uniform grain size distribution, and relative low rugosities.

AB - The ferroelectric behavior of Ba 0.75Sr 0.25TiO 3 (BST) thin films deposited on nichrome substrates by RF-Sputtering sintered in situ at 673-1023 K temperature range has been studied. The thin films microstructures were observed using atomic force microscopy to determine rugosity and grain size. Extensive grain growth was observed at temperatures of 822 and 1023 K, varying from 75 to 95 nm, respectively. The ferroelectric properties were determined by the hysteresis loops applying an electric field of 100 kV/cm. The films sintered in the temperature range of 822-1023 K show a reduction of the remnant polarization Pr from 9.87 °C/cm 2 to 2.23 °C/cm 2, and the coercive field strength E c decrease from 57.75 kV/cm 2 to 19.85 kV/cm 2. In situ heat treatments let to have more uniform grain size distribution, and relative low rugosities.

KW - BST thin film

KW - Dielectric constant

KW - Ferroelectric properties

KW - In situ heat treatment

KW - RF sputtering

UR - http://www.scopus.com/inward/record.url?scp=84865258858&partnerID=8YFLogxK

M3 - Artículo

SN - 0004-881X

VL - 48

SP - 223

EP - 226

JO - Journal of the Australian Ceramic Society

JF - Journal of the Australian Ceramic Society

IS - 2

ER -

On the dielectric and ferroelectric properties of Ba _0.75Sr _0.25TiO ₃ thin films deposited by RF Sputtering

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Keywords

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