@inproceedings{73a40df32c044a4daf355102b8db50c8,
title = "Nitrogen incorporation in Al2O3 thin films prepared by pulsed ultrasonic sprayed pyrolysis",
abstract = "The electrical characteristics and the chemical composition profiles determined by XPS and SIMS for aluminum oxide thin films deposited by pulsed ultrasonic spray pyrolysis are reported. The films were deposited on c-Si at 550 °C using a chemical solution of aluminum acetylacetonate as source of aluminum and N, N-Dimethylformamide as solvent, in addition a H 2O-NH4OH mist was supplied simultaneously during deposition to improve the overall properties of these films. The results show that there is nitrogen incorporation in the films at the interface with the Si substrate. There is also a clear migration of silicon into the deposited film. The thickness of the films was in the range of 30 nm. Infrared spectroscopy also shows the presence of Si-O bonds. The dielectric constant for these films was higher than 8 and their interface trap density at midgap was in the 10 10 eV-1 cm-2 range.",
author = "S. Carmona-Tellez and C. Palacio and S. Gallardo and Z. Rivera and M. Aguilar-Frutis and M. Garcia-Hipolito and G. Alarcon-Flores and C. Falcony",
year = "2009",
doi = "10.1149/1.3206618",
language = "Ingl{\'e}s",
isbn = "9781566777438",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "6",
pages = "179--186",
booktitle = "ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7",
edition = "6",
note = "7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society ; Conference date: 05-10-2009 Through 07-10-2009",
}