Nature of visible luminescence of co-sputtered Si-SiOx systems

T. Torchynska; F. G. Becerril Espinoza; Y. Goldstein; E. Savir; J. Jedrzejewski; L. Khomenkova; N. Korsunska; V. Yukhimchuk

doi:10.1016/j.physb.2003.09.235

Nature of visible luminescence of co-sputtered Si-SiO_x systems

T. Torchynska, F. G. Becerril Espinoza, Y. Goldstein, E. Savir, J. Jedrzejewski, L. Khomenkova, N. Korsunska, V. Yukhimchuk

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Conference article › peer-review

12 Scopus citations

Abstract

Photoluminescence (PL) spectra and Raman scattering spectra of Si-SiO _x systems, prepared by radio frequency magnetron sputtering method and thermal annealed at 1150°C for creation of Si nano-crystallites, were investigated as a function of Si content and Si nano-crystallite sizes. It was shown that the PL spectrum of such systems consists of several bands with peak positions at 1.32-1.34, 1.42-1.58, 1.77, 2.05 and 2.30eV. The dependencies of these PL band parameters on concentration and size of Si nano-crystallites in the Si-SiO_x system have been investigated and analyzed. The nature of radiative optical transitions for all PL bands is discussed.

Translated title of the contribution	Naturaleza de la luminiscencia visible de los sistemas Si- SiOx co-pulverizados
Original language	English
Pages (from-to)	1119-1123
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	340-342
DOIs	https://doi.org/10.1016/j.physb.2003.09.235
State	Published - 31 Dec 2003
Event	Proceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark Duration: 28 Jul 2003 → 1 Aug 2003

Keywords

Photoluminescence
Quantum dots

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10.1016/j.physb.2003.09.235

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title = "Nature of visible luminescence of co-sputtered Si-SiOx systems",

abstract = "Photoluminescence (PL) spectra and Raman scattering spectra of Si-SiO x systems, prepared by radio frequency magnetron sputtering method and thermal annealed at 1150°C for creation of Si nano-crystallites, were investigated as a function of Si content and Si nano-crystallite sizes. It was shown that the PL spectrum of such systems consists of several bands with peak positions at 1.32-1.34, 1.42-1.58, 1.77, 2.05 and 2.30eV. The dependencies of these PL band parameters on concentration and size of Si nano-crystallites in the Si-SiOx system have been investigated and analyzed. The nature of radiative optical transitions for all PL bands is discussed.",

keywords = "Photoluminescence, Quantum dots",

author = "T. Torchynska and {Becerril Espinoza}, {F. G.} and Y. Goldstein and E. Savir and J. Jedrzejewski and L. Khomenkova and N. Korsunska and V. Yukhimchuk",

note = "Funding Information: This work was supported by CONACYT (Project 33427-U and International cooperation projects Mexico-Israel and Mexico-Ukraine), as well as CGPI—IPN Mexico.; Proceedings of the 22nd International Conference on Defects in (ICDS-22) ; Conference date: 28-07-2003 Through 01-08-2003",

year = "2003",

month = dec,

day = "31",

doi = "10.1016/j.physb.2003.09.235",

language = "Ingl{\'e}s",

volume = "340-342",

pages = "1119--1123",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

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TY - JOUR

T1 - Nature of visible luminescence of co-sputtered Si-SiOx systems

AU - Torchynska, T.

AU - Becerril Espinoza, F. G.

AU - Goldstein, Y.

AU - Savir, E.

AU - Jedrzejewski, J.

AU - Khomenkova, L.

AU - Korsunska, N.

AU - Yukhimchuk, V.

N1 - Funding Information: This work was supported by CONACYT (Project 33427-U and International cooperation projects Mexico-Israel and Mexico-Ukraine), as well as CGPI—IPN Mexico.

PY - 2003/12/31

Y1 - 2003/12/31

N2 - Photoluminescence (PL) spectra and Raman scattering spectra of Si-SiO x systems, prepared by radio frequency magnetron sputtering method and thermal annealed at 1150°C for creation of Si nano-crystallites, were investigated as a function of Si content and Si nano-crystallite sizes. It was shown that the PL spectrum of such systems consists of several bands with peak positions at 1.32-1.34, 1.42-1.58, 1.77, 2.05 and 2.30eV. The dependencies of these PL band parameters on concentration and size of Si nano-crystallites in the Si-SiOx system have been investigated and analyzed. The nature of radiative optical transitions for all PL bands is discussed.

AB - Photoluminescence (PL) spectra and Raman scattering spectra of Si-SiO x systems, prepared by radio frequency magnetron sputtering method and thermal annealed at 1150°C for creation of Si nano-crystallites, were investigated as a function of Si content and Si nano-crystallite sizes. It was shown that the PL spectrum of such systems consists of several bands with peak positions at 1.32-1.34, 1.42-1.58, 1.77, 2.05 and 2.30eV. The dependencies of these PL band parameters on concentration and size of Si nano-crystallites in the Si-SiOx system have been investigated and analyzed. The nature of radiative optical transitions for all PL bands is discussed.

KW - Photoluminescence

KW - Quantum dots

UR - http://www.scopus.com/inward/record.url?scp=0347134642&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2003.09.235

DO - 10.1016/j.physb.2003.09.235

M3 - Artículo de la conferencia

AN - SCOPUS:0347134642

SN - 0921-4526

VL - 340-342

SP - 1119

EP - 1123

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Proceedings of the 22nd International Conference on Defects in (ICDS-22)

Y2 - 28 July 2003 through 1 August 2003

ER -

Nature of visible luminescence of co-sputtered Si-SiO_x systems

Abstract

Keywords

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