TY - JOUR
T1 - Nature of visible luminescence and its excitation in Si-SiOx systems
AU - Khomenkova, L.
AU - Korsunska, N.
AU - Yukhimchuk, V.
AU - Jumayev, B.
AU - Torchynska, T.
AU - Hernandez, A. Vivas
AU - Many, A.
AU - Goldstein, Y.
AU - Savir, E.
AU - Jedrzejewski, J.
N1 - Funding Information:
This work has been financially supported by National Academy of Sciences of Ukraine, CONACYT and CGPI-IPN Mexico, Ministry of Science of Israel. One of the authors (L.K.) was supported by Grants of the President of Ukraine for young scientists.
PY - 2003/5
Y1 - 2003/5
N2 - Photoluminescence (PL) spectra and their temperature dependence, as well as PL excitation and Raman spectra of Si-SiOx systems prepared by RF magnetron sputtering were investigated as a function of Si content. It was shown that PL spectrum of such systems consists of several bands. The correlation of shift of peak position of the lower-energy band from 1.38 to 1.54 eV with the change of size of Si nanocrystallites from 5 to 2.7 nm was observed. It was assumed that this PL band is connected with carrier recombination inside Si nanoparticles or with radiative transitions between a Si band and an interface level. It was shown that peak positions of the other observed bands (at 1.7, 2.06 and 2.32 eV) do not depend on the sizes of Si nanocrystallites. It was suggested that they are connected with silicon oxide defects based on the increase of intensities of these bands with increasing silicon oxide content. It was also shown that the excitation of PL is mainly due to light absorption in silicon nanocrystallites. Participation of hot carriers in excitation of defect-related bands was assumed.
AB - Photoluminescence (PL) spectra and their temperature dependence, as well as PL excitation and Raman spectra of Si-SiOx systems prepared by RF magnetron sputtering were investigated as a function of Si content. It was shown that PL spectrum of such systems consists of several bands. The correlation of shift of peak position of the lower-energy band from 1.38 to 1.54 eV with the change of size of Si nanocrystallites from 5 to 2.7 nm was observed. It was assumed that this PL band is connected with carrier recombination inside Si nanoparticles or with radiative transitions between a Si band and an interface level. It was shown that peak positions of the other observed bands (at 1.7, 2.06 and 2.32 eV) do not depend on the sizes of Si nanocrystallites. It was suggested that they are connected with silicon oxide defects based on the increase of intensities of these bands with increasing silicon oxide content. It was also shown that the excitation of PL is mainly due to light absorption in silicon nanocrystallites. Participation of hot carriers in excitation of defect-related bands was assumed.
KW - Photoluminescence
KW - Photoluminescence excitation
KW - Si nanocrystallites
KW - Si-SiO system
KW - Temperature dependence
UR - http://www.scopus.com/inward/record.url?scp=0037402212&partnerID=8YFLogxK
U2 - 10.1016/S0022-2313(02)00628-2
DO - 10.1016/S0022-2313(02)00628-2
M3 - Artículo de la conferencia
AN - SCOPUS:0037402212
SN - 0022-2313
VL - 102-103
SP - 705
EP - 711
JO - Journal of Luminescence
JF - Journal of Luminescence
IS - SPEC
T2 - Proceedings of the 2002 International Conference on Luminescence
Y2 - 24 August 2002 through 29 August 2002
ER -