@inproceedings{1561accb70f8410783452685139ff103,
title = "Nature of the red photoluminescence in porous silicon",
abstract = "Photoluminescence and its excitation, Raman scattering, as -well as Atomic Force Microscopy investigations were used to study the photoluminescence mechanism in P-Si. The dependencies of all characteristics on P-Si preparation regimes -duration of electrochemical etching process, have been investigated. The influence on the PL spectra of the variation of the excitation light wavelength and the storage in vacuum were studied as well. We have shown the red luminescence band can be decomposed into three elementary bands with different nature.",
author = "Torchynska, {T. V.} and G. Bacarril-Espinosa and A. Ita-Torre and {Palacios Gomez}, J. and Korsunska, {N. E.} and Khomenkova, {L. Yu} and Bulakh, {B. M.} and Scherbina, {L. V.}",
note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003 ; Conference date: 16-10-2000 Through 18-10-2000",
year = "2000",
doi = "10.1109/ASDAM.2000.889517",
language = "Ingl{\'e}s",
series = "ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "347--350",
editor = "Jan Kuzmik and Jozef Osvald and Stefan Hascik and Juraj Breza",
booktitle = "ASDAM 2000 - Conference Proceedings",
address = "Estados Unidos",
}