Abstract
Photoluminescence spectra are investigated of InAs/InGaAs QD structures prepared be MBE on GaAs substrates in a range of pumping power density up to 0. 6 kW/cm2. Multiple spectral band are observed corresponding to electron shells in atom-like dots. Identification of shells is proposed on the basis of spherical oscillator model. Energy diagram of dots is proposed taking into account identical temperature dependence of PL intensity in three lowest spectral bands.
Translated title of the contribution | Fotoluminiscencia multicapa de puntos cuánticos InAs/InGaAs |
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Original language | English |
Pages (from-to) | 21-28 |
Number of pages | 8 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 4986 |
DOIs | |
State | Published - 2003 |
Event | PROCEEDINGS OF SPIE SPIE - The International Society for Optical Engineering: Physics and Simulation of Optoelectronic Devices XI - San Jose, CA, United States Duration: 27 Jan 2003 → 31 Jan 2003 |
Keywords
- Emission spectra
- Energy diagram
- Photoluminescence
- Quantum dots