Multi-shell photoluminescence from InAs/InGaAs quantum dots

P. G. Eliseev, K. J. Malloy, A. Stintz, T. V. Torchynska, H. M. Alfaro Lopez, R. Pena Sierra

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

Photoluminescence spectra are investigated of InAs/InGaAs QD structures prepared be MBE on GaAs substrates in a range of pumping power density up to 0. 6 kW/cm2. Multiple spectral band are observed corresponding to electron shells in atom-like dots. Identification of shells is proposed on the basis of spherical oscillator model. Energy diagram of dots is proposed taking into account identical temperature dependence of PL intensity in three lowest spectral bands.

Translated title of the contributionFotoluminiscencia multicapa de puntos cuánticos InAs/InGaAs
Original languageEnglish
Pages (from-to)21-28
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4986
DOIs
StatePublished - 2003
EventPROCEEDINGS OF SPIE SPIE - The International Society for Optical Engineering: Physics and Simulation of Optoelectronic Devices XI - San Jose, CA, United States
Duration: 27 Jan 200331 Jan 2003

Keywords

  • Emission spectra
  • Energy diagram
  • Photoluminescence
  • Quantum dots

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