TY - JOUR
T1 - Morphological, optical, and nonlinear optical properties of fluorine-indium-doped zinc oxide thin films
AU - Morales-Saavedra, O. G.
AU - Castañeda, L.
AU - Bañuelos, J. G.
AU - Ortega-Martínez, R.
N1 - Funding Information:
ACKNOWLEDGMENTS The authors thank A. Palafox-Gómez, M.A. Luna-Arias, J. Vega-Pérez, D. Ramírez-González, and A. Gen-Mora for their contributions to the measurements of the film properties; Dr. Neil Bruce for English revision; and C.J. Roman-Moreno (CCADET-UNAM) for valuable technical assistance and laser maintenance. Two of the authors (L. Castañeda and O.G. Morales-Saavedra) gratefully acknowledge the financial support of the CONACyT under project numbers 49536 and 47421, respectively. L. Castañeda also acknowledges financial support from the Universidad Iberoamericana.
PY - 2008/3
Y1 - 2008/3
N2 - Chemically sprayed fluorine-indium-doped zinc oxide thin films (ZnO:F:In) were deposited on glass substrates. A mixture of zinc pentanedionate, indium sulfate, and fluoride acid was used in the starting solution. The influence of both the dopant concentration in the starting solution and the substrate temperature on the transport, morphological, linear, and nonlinear optical (NLO) properties were fully characterized with atomic force microscopy (AFM), scanning-electron microscopy (SEM), UV-VIS, and photoluminescence (PL) spectroscopies, and the second-harmonic generation (SHG) technique, respectively. A decrease in the resistivity was observed for increasing substrate temperatures, reaching a minimum value of 1.2 × 10-2 Ω cm for samples deposited at 500°C. The surface morphology was also dependent on the dopant concentration in the starting solution and on the substrate temperature. The X-ray diffraction (XRD) patterns revealed that the ZnO:F:In thin solid films are polycrystalline in nature fitting with a hexagonal wurtize type and showing (002) preferential growth for all of the studied samples. The optical transmittance of these films was found to be higher than 80%, from which the optical band gap of these samples was determined. Finally, a clear dependence on the quadratic NLO properties of the developed semiconducting ZnO:F:In thin films with the substrate temperatures was established, where huge x (2)-NLO coefficients on the order of x 33 (2) = 37 pm V-1 were measured for high substrate temperatures.
AB - Chemically sprayed fluorine-indium-doped zinc oxide thin films (ZnO:F:In) were deposited on glass substrates. A mixture of zinc pentanedionate, indium sulfate, and fluoride acid was used in the starting solution. The influence of both the dopant concentration in the starting solution and the substrate temperature on the transport, morphological, linear, and nonlinear optical (NLO) properties were fully characterized with atomic force microscopy (AFM), scanning-electron microscopy (SEM), UV-VIS, and photoluminescence (PL) spectroscopies, and the second-harmonic generation (SHG) technique, respectively. A decrease in the resistivity was observed for increasing substrate temperatures, reaching a minimum value of 1.2 × 10-2 Ω cm for samples deposited at 500°C. The surface morphology was also dependent on the dopant concentration in the starting solution and on the substrate temperature. The X-ray diffraction (XRD) patterns revealed that the ZnO:F:In thin solid films are polycrystalline in nature fitting with a hexagonal wurtize type and showing (002) preferential growth for all of the studied samples. The optical transmittance of these films was found to be higher than 80%, from which the optical band gap of these samples was determined. Finally, a clear dependence on the quadratic NLO properties of the developed semiconducting ZnO:F:In thin films with the substrate temperatures was established, where huge x (2)-NLO coefficients on the order of x 33 (2) = 37 pm V-1 were measured for high substrate temperatures.
UR - http://www.scopus.com/inward/record.url?scp=43349092925&partnerID=8YFLogxK
U2 - 10.1134/s1054660x08030158
DO - 10.1134/s1054660x08030158
M3 - Artículo
SN - 1054-660X
VL - 18
SP - 283
EP - 291
JO - Laser Physics
JF - Laser Physics
IS - 3
ER -