TY - GEN
T1 - Modeling high-frequency noise behavior in a SiGe heterojunction bipolar transistor for different bias
AU - Pacheco-Sanchez, Anibal
AU - Enciso-Aguilar, Mauro
AU - Rodriguez-Mendez, Luis
AU - Ramirez-Garcia, Eloy
PY - 2011
Y1 - 2011
N2 - In this paper, a study of the minimum noise figure of a given SiGe Heterojunction Bipolar Transistor (HBT) varying the bias point at different frequencies is implemented; the study includes a comparison between results obtained from computational simulation and analytical expression with measurements reported previously.
AB - In this paper, a study of the minimum noise figure of a given SiGe Heterojunction Bipolar Transistor (HBT) varying the bias point at different frequencies is implemented; the study includes a comparison between results obtained from computational simulation and analytical expression with measurements reported previously.
UR - http://www.scopus.com/inward/record.url?scp=84860453877&partnerID=8YFLogxK
U2 - 10.1109/IMOC.2011.6169331
DO - 10.1109/IMOC.2011.6169331
M3 - Contribución a la conferencia
AN - SCOPUS:84860453877
SN - 9781457716621
T3 - SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference Proceedings
SP - 901
EP - 904
BT - 2011 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference, IMOC 2011
T2 - 2011 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference, IMOC 2011
Y2 - 29 October 2011 through 1 November 2011
ER -