Microwave noise performance and modeling of SiGe-based HFETs

Mauro Enciso Aguilar; Paul Crozat; Thomas Hackbarth; Hans Joest Herzog; Frédéric Aniel

doi:10.1109/TED.2005.857170

Microwave noise performance and modeling of SiGe-based HFETs

Mauro Enciso Aguilar, Paul Crozat, Thomas Hackbarth, Hans Joest Herzog, Frédéric Aniel

Escuela Superior de Ingeniería Mecánica y Eléctrica (ESIME), Unidad Zacatenco

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Microwave noise performance of SiGe-based heterostructure field effect transistors (HFETs) is presented. Noise parameters for devices with buried channel fabricated on several virtual substrates are discussed. The impact of such strain relieved buffers on device noise performance is estimated by a proper noise de-embedding technique. Then, the noise properties measured in the 2.5-18-GHz frequency range are compared with those of other technologies. Noise parameters of SiGe HFETs are simulated using Pospieszalskis and Van Der Ziel's noise models. Some detrimental effects like access resistances and self-heating effects that negatively impact the microwave noise behavior are discussed and some alternatives to overwhelm them are proposed.

Original language	English
Pages (from-to)	2409-2415
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	52
Issue number	11
DOIs	https://doi.org/10.1109/TED.2005.857170
State	Published - Nov 2005

Keywords

Computer-aided design (CAD)
Heterostructure field-effect transistors (HFETs)
Microwave noise
Noise modeling
Noise parameters
SiGe
Strained-silicon
Virtual substrate (VS)

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10.1109/TED.2005.857170

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title = "Microwave noise performance and modeling of SiGe-based HFETs",

abstract = "Microwave noise performance of SiGe-based heterostructure field effect transistors (HFETs) is presented. Noise parameters for devices with buried channel fabricated on several virtual substrates are discussed. The impact of such strain relieved buffers on device noise performance is estimated by a proper noise de-embedding technique. Then, the noise properties measured in the 2.5-18-GHz frequency range are compared with those of other technologies. Noise parameters of SiGe HFETs are simulated using Pospieszalskis and Van Der Ziel's noise models. Some detrimental effects like access resistances and self-heating effects that negatively impact the microwave noise behavior are discussed and some alternatives to overwhelm them are proposed.",

keywords = "Computer-aided design (CAD), Heterostructure field-effect transistors (HFETs), Microwave noise, Noise modeling, Noise parameters, SiGe, Strained-silicon, Virtual substrate (VS)",

author = "Aguilar, {Mauro Enciso} and Paul Crozat and Thomas Hackbarth and Herzog, {Hans Joest} and Fr{\'e}d{\'e}ric Aniel",

note = "Funding Information: Manuscript received March 23, 2005; revised July 25, 2005. This work was supported by the European Community under Project IST-1999-SIGMUND and by IPN-Mexico under Project 47627-CONACYT. The review of this paper was arranged by Editor J. N. Burghartz. M. Encisco Aguilar is with the Instituto Polit{\'e}cnico Nacional ESIME-SEPI, CP 07738, M{\'e}xico City, M{\'e}xico DF (e-mail: mencisoa@ipn.mx). P. Crozat and F. Aniel are with the Institut d{\textquoteright}Electronique Fondamentale, Paris-Sud University, Orsay F-91405, France. T. Hackbarth and H.-J. Herzog are with DaimlerChrysler Research Center, D-89081 Ulm, Germany. Digital Object Identifier 10.1109/TED.2005.857170",

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AU - Aguilar, Mauro Enciso

AU - Crozat, Paul

AU - Hackbarth, Thomas

AU - Herzog, Hans Joest

AU - Aniel, Frédéric

N1 - Funding Information: Manuscript received March 23, 2005; revised July 25, 2005. This work was supported by the European Community under Project IST-1999-SIGMUND and by IPN-Mexico under Project 47627-CONACYT. The review of this paper was arranged by Editor J. N. Burghartz. M. Encisco Aguilar is with the Instituto Politécnico Nacional ESIME-SEPI, CP 07738, México City, México DF (e-mail: mencisoa@ipn.mx). P. Crozat and F. Aniel are with the Institut d’Electronique Fondamentale, Paris-Sud University, Orsay F-91405, France. T. Hackbarth and H.-J. Herzog are with DaimlerChrysler Research Center, D-89081 Ulm, Germany. Digital Object Identifier 10.1109/TED.2005.857170

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AB - Microwave noise performance of SiGe-based heterostructure field effect transistors (HFETs) is presented. Noise parameters for devices with buried channel fabricated on several virtual substrates are discussed. The impact of such strain relieved buffers on device noise performance is estimated by a proper noise de-embedding technique. Then, the noise properties measured in the 2.5-18-GHz frequency range are compared with those of other technologies. Noise parameters of SiGe HFETs are simulated using Pospieszalskis and Van Der Ziel's noise models. Some detrimental effects like access resistances and self-heating effects that negatively impact the microwave noise behavior are discussed and some alternatives to overwhelm them are proposed.

KW - Computer-aided design (CAD)

KW - Heterostructure field-effect transistors (HFETs)

KW - Microwave noise

KW - Noise modeling

KW - Noise parameters

KW - SiGe

KW - Strained-silicon

KW - Virtual substrate (VS)

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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ER -

Microwave noise performance and modeling of SiGe-based HFETs

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