TY - JOUR
T1 - Mechanism of photoluminescence of silicon oxide films enriched by Si or Ge
AU - Torchynska, T. V.
AU - Aguilar-Hernandez, J.
AU - Schacht Hernández, L.
AU - Polupan, G.
AU - Goldstein, Y.
AU - Many, A.
AU - Jedrzejewski, J.
AU - Kolobov, A.
N1 - Funding Information:
This work was supported by CONACYT (Project 33427-U and International cooperation project Mexico–Israel), as well as CGPI–IPN Mexico.
PY - 2003/4
Y1 - 2003/4
N2 - Photoluminescence peculiarities of silicon oxide films enriched by Si or Ge have been investigated. Photoluminescence (PL) and Raman spectra were measured before and after thermal annealing at 800 °C. The dependences of PL peculiarities on the concentration of Si and Ge, as well as on the existence (or absence) of Si (Ge) quantum dots (QDs) in silicon oxide films are analyzed for the photoluminescence mechanism study in the above-mentioned systems.
AB - Photoluminescence peculiarities of silicon oxide films enriched by Si or Ge have been investigated. Photoluminescence (PL) and Raman spectra were measured before and after thermal annealing at 800 °C. The dependences of PL peculiarities on the concentration of Si and Ge, as well as on the existence (or absence) of Si (Ge) quantum dots (QDs) in silicon oxide films are analyzed for the photoluminescence mechanism study in the above-mentioned systems.
KW - Photoluminescence
KW - Silicon germanium nanocrystals
UR - http://www.scopus.com/inward/record.url?scp=0037394914&partnerID=8YFLogxK
U2 - 10.1016/S0167-9317(03)00029-7
DO - 10.1016/S0167-9317(03)00029-7
M3 - Artículo de la conferencia
AN - SCOPUS:0037394914
SN - 0167-9317
VL - 66
SP - 83
EP - 90
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 1-4
T2 - IUMRS-ICEM 2002
Y2 - 10 June 2002 through 14 June 2002
ER -