TY - GEN
T1 - Magnetic interactions study in ZnO doped with Fe ions produced by thermal diffusion processes
AU - Baca, R.
AU - Galván, M.
AU - Méndez, J. V.
AU - Andraca, J. A.
AU - Peña, R.
PY - 2013
Y1 - 2013
N2 - Recently, the oxides have received attention and great interest due to their magnetic ordering above of the room temperature by doping a very low amount of transition metal ions, which are very promising for applications such as biosensing, hyperthermia, doped magnetic semiconductors with lower energy losses and rapid response at alternating-magnetic fields. In this work the magnetic interactions on Fe doped ZnO thin-films was studied. Raman spectroscopy allowed the monitoring of iron ions diffusion and demonstrated that symmetry modes are crucial for understanding of the magnetic ordering. X-ray diffraction (XRD) was used to determine the oxidation state of the iron ions and stress into ZnO lattice. MFM confirmed that magnetic moments and magnetic forces on scanned surface depend on magnetic-domain structure formation.
AB - Recently, the oxides have received attention and great interest due to their magnetic ordering above of the room temperature by doping a very low amount of transition metal ions, which are very promising for applications such as biosensing, hyperthermia, doped magnetic semiconductors with lower energy losses and rapid response at alternating-magnetic fields. In this work the magnetic interactions on Fe doped ZnO thin-films was studied. Raman spectroscopy allowed the monitoring of iron ions diffusion and demonstrated that symmetry modes are crucial for understanding of the magnetic ordering. X-ray diffraction (XRD) was used to determine the oxidation state of the iron ions and stress into ZnO lattice. MFM confirmed that magnetic moments and magnetic forces on scanned surface depend on magnetic-domain structure formation.
UR - http://www.scopus.com/inward/record.url?scp=84889249254&partnerID=8YFLogxK
U2 - 10.1557/opl.2013.124
DO - 10.1557/opl.2013.124
M3 - Contribución a la conferencia
AN - SCOPUS:84889249254
SN - 9781605114712
T3 - Materials Research Society Symposium Proceedings
SP - 25
EP - 30
BT - Oxide Semiconductors and Thin Films
T2 - 2012 MRS Fall Meeting
Y2 - 25 November 2012 through 30 November 2012
ER -