@article{f3ba34d345c84a12956630dd60e877a0,
title = "Low-Threshold GaInAsSb/GaAlAsSb Double-Heterostructure Lasers Grown by LPE",
abstract = "We report the lowest threshold current density Ga0.86In0.14As0.19Sb0.87/Ga0.79Al0.27As0.02Sb0.98 2.2 µm lasers grown by LPE. Using transverse far-field patterns and theoretical calculations for the fundamental mode, we estimated the value of the active layer refractive index as 3.78. We also show that the development of low-threshold current stripe lasers is limited by an excessive current spread in the low-resistivity p-type active layer. This is partly solved by making the active region n-type. The minimum Ith obtained for n-type active layers was 290 mA compared to 800 mA for p-type active layers, the broad-area threshold current being the same (3 kA/cm2) in both cases.",
author = "Morosini, {M. B.Z.} and Herrera-P{\'e}rez, {J. L.} and Loural, {M. S.S.} and {Von Zuben}, {A. A.G.} and {da Silveira}, {A. C.F.} and Patel, {N. B.}",
note = "Funding Information: Manuscript received November,l7, 1992; revised March 19, 1993. This work was supported by TELEBRAS. The work of M.S.S. Loural was supported by CNPq. M. B. Z. Morosini. M. S. S. Loural. A. A. G. Von Zuhen, and A. C. F. da Silveira are with the LPD/DFA. Instituto de Fisica “Gleh Wa-taghin”-UNICAMP, 13081-970. Campinas. SP. Brazil. J. L. Herrera-Perez was with the LPDIDFA. lnstituto de Fisica “Gleb Wataghin”-UNICAMP, 13081 -970, Campinas, SP, Brazil. He is now with the lnstituto de Fisica, U. A. de Puebla, Puehla 72570, Mexico. N. B. Patel is with the LPD/DFA, lnstituto de Fisica “Gleh Wa-taghin”-UNICAMP. 1308 1-970, Campinas, SP, Brazil and CPqD-TE-LEBRAS. IEEE Log Number 9209241,",
year = "1993",
month = jun,
doi = "10.1109/3.234475",
language = "Ingl{\'e}s",
volume = "29",
pages = "2103--2108",
journal = "IEEE Journal of Quantum Electronics",
issn = "0018-9197",
number = "6",
}