TY - JOUR
T1 - Low-temperature thin film transistors based on pulsed laser deposited CdS active layers
AU - Martinez-Landeros, V. H.
AU - Hernández-Como, N.
AU - Gutierrez-Heredia, G.
AU - Ramirez-Bon, R.
AU - Quevedo-López, M. A.
AU - Aguirre-Tostado, F. S.
N1 - Publisher Copyright:
© 2019 IOP Publishing Ltd.
PY - 2019/1/10
Y1 - 2019/1/10
N2 - Cadmium sulfide (CdS) thin films as n-type semiconductor material were deposited by pulsed laser deposition by varying the argon pressure at room temperature. The structural, morphological and stoichiometric characteristics of the CdS films were studied as a function of the deposition pressure. The results show that the argon deposition pressure had a dramatic impact on the CdS film properties. The CdS electrical resistivity increased 10 4 times when argon pressure was increased from 8 to 10.66 Pa. These films were employed on fully-patterned thin film transistors (TFTs) fabricated by a photolithography-based process, and their electrical characteristics were measured. The TFTs electrical performance achieved a mobility of ∼24 cm 2 /V-s with a threshold voltage from 1.5 to 12.6 V after testing. The deposition pressure of CdS for transistors fabrication, which optimizes the resulting electrical characteristics, was determined from this study.
AB - Cadmium sulfide (CdS) thin films as n-type semiconductor material were deposited by pulsed laser deposition by varying the argon pressure at room temperature. The structural, morphological and stoichiometric characteristics of the CdS films were studied as a function of the deposition pressure. The results show that the argon deposition pressure had a dramatic impact on the CdS film properties. The CdS electrical resistivity increased 10 4 times when argon pressure was increased from 8 to 10.66 Pa. These films were employed on fully-patterned thin film transistors (TFTs) fabricated by a photolithography-based process, and their electrical characteristics were measured. The TFTs electrical performance achieved a mobility of ∼24 cm 2 /V-s with a threshold voltage from 1.5 to 12.6 V after testing. The deposition pressure of CdS for transistors fabrication, which optimizes the resulting electrical characteristics, was determined from this study.
KW - cadmium sulfide
KW - pulsed laser deposition (PLD)
KW - thin film transistors (TFTs)
UR - http://www.scopus.com/inward/record.url?scp=85064089784&partnerID=8YFLogxK
U2 - 10.1088/1361-6641/aaf66d
DO - 10.1088/1361-6641/aaf66d
M3 - Artículo
SN - 0268-1242
VL - 34
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 2
M1 - 025008
ER -