TY - JOUR
T1 - Low-temperature photoluminescence of in0.14Ga 0.86As0.13Sb0.87 solid solution lattice matched to GaSb
AU - Díaz-Reyes, J.
AU - Gómez-Herrera, M. L.
AU - Herrera-Pérez, J. L.
AU - Rodríguez, P.
AU - Mendoza-Álvarez, J. G.
PY - 2009/8/5
Y1 - 2009/8/5
N2 - A low-temperature photoluminescence (PL) study of liquid phase epitaxy grown undoped and Te-doped In0.14Ga0.86As 0.13Sb0.87 layers lattice matched to n-type GaSb is reported. The quaternary solid solutions InxGa1-x As ySb12y are promising materials for the fabrication of optoelectronics devices operating in the spectral range of 3-5 μm because these alloys can form type II heterojunctions with both staggered and broken-gap alignments. The PL for the undoped InGaAsSb layer shows three narrow exciton-related peaks with narrow full width at half-maximum (FWHM), which is an evidence of the good crystalline quality of the epilayers. The PL spectrum for a slight Te-doped InGaAsSb layer shows a red shift, which is more remarkable for high excitation powers. When increasing the Te-doping in the quaternary alloys, the PL spectra show that the donor-to-acceptor radiative transition associated with neutral tellurium and a neutral acceptor is dominant, although the band-to-band transition is present too.
AB - A low-temperature photoluminescence (PL) study of liquid phase epitaxy grown undoped and Te-doped In0.14Ga0.86As 0.13Sb0.87 layers lattice matched to n-type GaSb is reported. The quaternary solid solutions InxGa1-x As ySb12y are promising materials for the fabrication of optoelectronics devices operating in the spectral range of 3-5 μm because these alloys can form type II heterojunctions with both staggered and broken-gap alignments. The PL for the undoped InGaAsSb layer shows three narrow exciton-related peaks with narrow full width at half-maximum (FWHM), which is an evidence of the good crystalline quality of the epilayers. The PL spectrum for a slight Te-doped InGaAsSb layer shows a red shift, which is more remarkable for high excitation powers. When increasing the Te-doping in the quaternary alloys, the PL spectra show that the donor-to-acceptor radiative transition associated with neutral tellurium and a neutral acceptor is dominant, although the band-to-band transition is present too.
UR - http://www.scopus.com/inward/record.url?scp=68949085373&partnerID=8YFLogxK
U2 - 10.1021/cg900158r
DO - 10.1021/cg900158r
M3 - Artículo
SN - 1528-7483
VL - 9
SP - 3477
EP - 3480
JO - Crystal Growth and Design
JF - Crystal Growth and Design
IS - 8
ER -