TY - JOUR
T1 - Low interface states and high dielectric constant y2O 3 films on Si substrates
AU - Alarcón-Flores, G.
AU - Aguilar-Frutis, M.
AU - Falcony, C.
AU - García-Hipolito, M.
AU - Araiza-Ibarra, J. J.
AU - Herrera-Suárez, H. J.
N1 - Funding Information:
The authors are grateful to CONACyT-Mexico and to CGPI-IPN for the financial support through the scientific research projects (Grant Nos. 2005815, 20040278, and 20031364). The technical assistance of J. Garcia-Coronel, M. Guerrero, R.J. Fregoso, A.B. Soto, and J. Lopez is also acknowledged.
PY - 2006/7
Y1 - 2006/7
N2 - Y2O3 films were deposited on c-Si substrates at temperatures in the 400-550°C range, with no further thermal treatment given to these samples, using the spray pyrolysis technique. The spraying solution was yttrium acetilacetonate disolved N,N-dimethylformamide. In addition, a solution of H2O-NH4OH was sprayed in parallel during the deposition process to improve the optical, structural, and electrical properties of the deposited films. The growth of a SiO2 layer between the yttrium oxide and the Si substrate during this deposition process resulted in interface state density values as low as 1010 eV-1 cm -2. An effective refractive index value of 1.86, and deposition rates close to 1 Å/s were obtained. The Y2O3 films were polycrystalline with a crystalline cubic phase highly textured with the (400) direction normal to the Si surface. An effective dielectric constant up to 13, as well as a dielectric strength of the order of 0.2 MV/cm was obtained for ∼1000 Å thick as-deposited films incorporated in a metal-oxide-semiconductor structure.
AB - Y2O3 films were deposited on c-Si substrates at temperatures in the 400-550°C range, with no further thermal treatment given to these samples, using the spray pyrolysis technique. The spraying solution was yttrium acetilacetonate disolved N,N-dimethylformamide. In addition, a solution of H2O-NH4OH was sprayed in parallel during the deposition process to improve the optical, structural, and electrical properties of the deposited films. The growth of a SiO2 layer between the yttrium oxide and the Si substrate during this deposition process resulted in interface state density values as low as 1010 eV-1 cm -2. An effective refractive index value of 1.86, and deposition rates close to 1 Å/s were obtained. The Y2O3 films were polycrystalline with a crystalline cubic phase highly textured with the (400) direction normal to the Si surface. An effective dielectric constant up to 13, as well as a dielectric strength of the order of 0.2 MV/cm was obtained for ∼1000 Å thick as-deposited films incorporated in a metal-oxide-semiconductor structure.
UR - http://www.scopus.com/inward/record.url?scp=33746539628&partnerID=8YFLogxK
U2 - 10.1116/1.2214710
DO - 10.1116/1.2214710
M3 - Artículo
AN - SCOPUS:33746539628
SN - 1071-1023
VL - 24
SP - 1873
EP - 1877
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
IS - 4
ER -