Lattice vibrations study of InxGa1-xAs ySb1-y quaternary alloys with low (In, As) content highly doped by tellurium grown by LPE

J. Díaz-Reyes, E. López-Cruz, J. G. Mendoza-Alvarez

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

The quaternary alloy InxGa1-xAsySb 1-y highly doped with tellurium was grown on substrates of p-type GaSb in the direction (100) by liquid phase epitaxy (LPE). The longitudinal (LO) and transverse (TO) optical modes were obtained using the modified random-element iso-displacement model (MREI model). The comparison of the experimental results with obtained by the MREI model allows to confirm that the bands correspond to the modes associated LO and TO of the binary compounds GaAs and (GaSb + InAs).

Original languageEnglish
Title of host publicationSixth International Conference on Advanced Optical Materials and Devices (AOMD-6)
DOIs
StatePublished - 2008
Event6th International Conference on Advanced Optical Materials and Devices, AOMD-6 - Riga, Latvia
Duration: 24 Aug 200827 Aug 2008

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7142
ISSN (Print)0277-786X

Conference

Conference6th International Conference on Advanced Optical Materials and Devices, AOMD-6
Country/TerritoryLatvia
CityRiga
Period24/08/0827/08/08

Keywords

  • III-V alloy compound semiconductors
  • III-V semiconductors growth
  • InGaAsSb semiconductors
  • Liquid phase epitaxy novel materials and technological advances for photonics
  • Phonons
  • Raman spectra

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