Abstract
Polycrystalline films of CdTe were prepared by the hot wall-close-spaced vapor transport technique on Corning glass substrates at substrate temperatures below 450 °C. The thickness of the films was constant at 25 μm for all samples grown at different substrate temperatures and different gas pressures. The film thickness was found to be a function of deposition time only (5μm per min), and virtually independent of substrate temperature and control gas pressure. The grain size was a monotonic function of film thickness, reaching 40 μm for a film thickness of 50 μm.
Original language | English |
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Pages (from-to) | 2994-2996 |
Number of pages | 3 |
Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
Volume | 13 |
Issue number | 6 |
DOIs |
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State | Published - Nov 1995 |
Externally published | Yes |