Ion beam analysis of high pressure deposition of epitaxial PZT thin films

E. Andrade; O. Blanco; O. G. de Lucio; C. Solis; M. F. Rocha; E. P. Zavala

doi:10.1016/j.nimb.2010.02.109

Ion beam analysis of high pressure deposition of epitaxial PZT thin films

E. Andrade, O. Blanco, O. G. de Lucio, C. Solis, M. F. Rocha, E. P. Zavala

Escuela Superior de Ingeniería Mecánica y Eléctrica (ESIME), Unidad Zacatenco

Research output: Contribution to journal › Article › peer-review

Abstract

Epitaxial thin films of Pb(Zr_0.53Ti_0.47) (PZT) ferroelectric ceramic were successfully grown on Sr(Nb)TiO₃ (SNTO) single crystal substrates by an high-pressure RF sputtering technique. Pure O₂ was used as working gas at a pressure above 1 Torr. The crystalline films properties were evaluated by θ-2θ DRX scans. From these measurements we concluded that the PZT layers were single crystalline and c-axis oriented with a (001)PZT||(001)SNTO crystallographic relationship. Film composition and film-substrate interface characteristics were studied by bombardment of the samples with a 2560 keV ³He⁺ beam. Rutherford Backscattering (RBS) technique was applied to fit the experimental spectra in order to deduce the elemental depth concentration profile of the films. The high-pressured technique represents a useful and capable method to obtaining in situ epitaxial ferroelectric thin film with high quality structural, compositional and dielectric properties, without post deposit treatment.

Original language	English
Pages (from-to)	1964-1966
Number of pages	3
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	268
Issue number	11-12
DOIs	https://doi.org/10.1016/j.nimb.2010.02.109
State	Published - Jun 2010

Keywords

Crystalline properties
High-pressure sputtering
PZT thin films
RBS

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@article{455c5ef4b2204d2a949379b8b3786482,

title = "Ion beam analysis of high pressure deposition of epitaxial PZT thin films",

abstract = "Epitaxial thin films of Pb(Zr0.53Ti0.47) (PZT) ferroelectric ceramic were successfully grown on Sr(Nb)TiO3 (SNTO) single crystal substrates by an high-pressure RF sputtering technique. Pure O2 was used as working gas at a pressure above 1 Torr. The crystalline films properties were evaluated by θ-2θ DRX scans. From these measurements we concluded that the PZT layers were single crystalline and c-axis oriented with a (001)PZT||(001)SNTO crystallographic relationship. Film composition and film-substrate interface characteristics were studied by bombardment of the samples with a 2560 keV 3He+ beam. Rutherford Backscattering (RBS) technique was applied to fit the experimental spectra in order to deduce the elemental depth concentration profile of the films. The high-pressured technique represents a useful and capable method to obtaining in situ epitaxial ferroelectric thin film with high quality structural, compositional and dielectric properties, without post deposit treatment.",

keywords = "Crystalline properties, High-pressure sputtering, PZT thin films, RBS",

author = "E. Andrade and O. Blanco and {de Lucio}, {O. G.} and C. Solis and Rocha, {M. F.} and Zavala, {E. P.}",

note = "Funding Information: This work was supported by UNAM DGAPA PAPIIT under contracts IN112609 and IN219609 , PROMEP/UDG EXB308. The authors acknowledge Arcadio Huerta and Eloisa Aparicio for their technical support.",

year = "2010",

month = jun,

doi = "10.1016/j.nimb.2010.02.109",

language = "Ingl{\'e}s",

volume = "268",

pages = "1964--1966",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

number = "11-12",

}

TY - JOUR

T1 - Ion beam analysis of high pressure deposition of epitaxial PZT thin films

AU - Andrade, E.

AU - Blanco, O.

AU - de Lucio, O. G.

AU - Solis, C.

AU - Rocha, M. F.

AU - Zavala, E. P.

N1 - Funding Information: This work was supported by UNAM DGAPA PAPIIT under contracts IN112609 and IN219609 , PROMEP/UDG EXB308. The authors acknowledge Arcadio Huerta and Eloisa Aparicio for their technical support.

PY - 2010/6

Y1 - 2010/6

N2 - Epitaxial thin films of Pb(Zr0.53Ti0.47) (PZT) ferroelectric ceramic were successfully grown on Sr(Nb)TiO3 (SNTO) single crystal substrates by an high-pressure RF sputtering technique. Pure O2 was used as working gas at a pressure above 1 Torr. The crystalline films properties were evaluated by θ-2θ DRX scans. From these measurements we concluded that the PZT layers were single crystalline and c-axis oriented with a (001)PZT||(001)SNTO crystallographic relationship. Film composition and film-substrate interface characteristics were studied by bombardment of the samples with a 2560 keV 3He+ beam. Rutherford Backscattering (RBS) technique was applied to fit the experimental spectra in order to deduce the elemental depth concentration profile of the films. The high-pressured technique represents a useful and capable method to obtaining in situ epitaxial ferroelectric thin film with high quality structural, compositional and dielectric properties, without post deposit treatment.

AB - Epitaxial thin films of Pb(Zr0.53Ti0.47) (PZT) ferroelectric ceramic were successfully grown on Sr(Nb)TiO3 (SNTO) single crystal substrates by an high-pressure RF sputtering technique. Pure O2 was used as working gas at a pressure above 1 Torr. The crystalline films properties were evaluated by θ-2θ DRX scans. From these measurements we concluded that the PZT layers were single crystalline and c-axis oriented with a (001)PZT||(001)SNTO crystallographic relationship. Film composition and film-substrate interface characteristics were studied by bombardment of the samples with a 2560 keV 3He+ beam. Rutherford Backscattering (RBS) technique was applied to fit the experimental spectra in order to deduce the elemental depth concentration profile of the films. The high-pressured technique represents a useful and capable method to obtaining in situ epitaxial ferroelectric thin film with high quality structural, compositional and dielectric properties, without post deposit treatment.

KW - Crystalline properties

KW - High-pressure sputtering

KW - PZT thin films

KW - RBS

UR - http://www.scopus.com/inward/record.url?scp=77953324190&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2010.02.109

DO - 10.1016/j.nimb.2010.02.109

M3 - Artículo

SN - 0168-583X

VL - 268

SP - 1964

EP - 1966

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 11-12

ER -

Ion beam analysis of high pressure deposition of epitaxial PZT thin films

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