TY - GEN
T1 - Investigations into the growth of GaN nanowires by MOCVD using azidotrimethylsilane as nitrogen source
AU - Velazquez, Miguel Angel Nuñez
AU - Lopez, Fernando Juárez
PY - 2014
Y1 - 2014
N2 - Gallium trichloride (GaCl3) and azidotrimethylsilane (CH3)3SiN3 were employed as alternatives gallium and nitrogen precursors respectively in the growth of GaN nanowires via a metal-organic chemical vapor deposition (MOCVD) system. Au pre-deposition on Si (100) substrate was using as catalysis seed to grown of GaN nanowires. X-Ray, FE-SEM and AFM analyses reveal that nanowires grown at temperature 1050 C present morphology characteristic to model VLS. Scanning electron microscopy reveal a surface morphology made up of wurzite that suggests that wires growth involve a melting process. A nucleation and growth mechanism, involving the congruent melting clusters of precursor molecules on the hot substrate surface, is therefore invoked to explain these observations. We attributed the improved growth behavior to the 'nearer-to-equilibrium' growth and may be close to local thermodynamic equilibrium.
AB - Gallium trichloride (GaCl3) and azidotrimethylsilane (CH3)3SiN3 were employed as alternatives gallium and nitrogen precursors respectively in the growth of GaN nanowires via a metal-organic chemical vapor deposition (MOCVD) system. Au pre-deposition on Si (100) substrate was using as catalysis seed to grown of GaN nanowires. X-Ray, FE-SEM and AFM analyses reveal that nanowires grown at temperature 1050 C present morphology characteristic to model VLS. Scanning electron microscopy reveal a surface morphology made up of wurzite that suggests that wires growth involve a melting process. A nucleation and growth mechanism, involving the congruent melting clusters of precursor molecules on the hot substrate surface, is therefore invoked to explain these observations. We attributed the improved growth behavior to the 'nearer-to-equilibrium' growth and may be close to local thermodynamic equilibrium.
KW - Gallium nitride
KW - MOCVD
KW - Nanowires
UR - http://www.scopus.com/inward/record.url?scp=84896275615&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMR.875-877.1483
DO - 10.4028/www.scientific.net/AMR.875-877.1483
M3 - Contribución a la conferencia
AN - SCOPUS:84896275615
SN - 9783037859933
T3 - Advanced Materials Research
SP - 1483
EP - 1489
BT - Material Research and Applications
PB - Trans Tech Publications
T2 - 2012 International Conference on Advanced Material and Manufacturing Science, ICAMMS 2012
Y2 - 20 December 2012 through 21 December 2012
ER -