TY - JOUR
T1 - Interference and electro-optical effects in cubic GaN/GaAs heterostructures prepared by molecular beam epitaxy
AU - Zendejas-Leal, B. E.
AU - Casallas-Moreno, Y. L.
AU - Yee-Rendon, C. M.
AU - González-Pedreros, G. I.
AU - Santoyo-Salazar, J.
AU - Aguilar-Hernández, J. R.
AU - Vázquez-López, C.
AU - Gallardo-Hernández, S.
AU - Huerta-Ruelas, J.
AU - López-López, M.
N1 - Publisher Copyright:
© 2020 American Institute of Physics Inc.. All rights reserved.
PY - 2020/9/28
Y1 - 2020/9/28
N2 - Cubic GaN (c-GaN) samples on GaAs (0 0 1) substrates were grown by RF-plasma-assisted molecular beam epitaxy, in which an As4 overpressure was employed for the nucleating layer. Photoreflectance spectra were obtained in the temperature range from 14 to 300 K. Two independent phenomena were noticed. The first one consisted in optical interference features below the c-GaN bandgap, whose origin is a thermo-optical effect: the ultraviolet perturbation beam changes the refractive index of the c-GaN. The second one represents electro-optical phenomena in which two classical band-to-band transitions occur: the first transition for c-GaN layer in which the temperature dependence reveals defects in the film attributed to a hexagonal fraction estimated previously between 3% and 10%, and a second transition for the GaAs substrate that shows Franz–Keldysh oscillations.
AB - Cubic GaN (c-GaN) samples on GaAs (0 0 1) substrates were grown by RF-plasma-assisted molecular beam epitaxy, in which an As4 overpressure was employed for the nucleating layer. Photoreflectance spectra were obtained in the temperature range from 14 to 300 K. Two independent phenomena were noticed. The first one consisted in optical interference features below the c-GaN bandgap, whose origin is a thermo-optical effect: the ultraviolet perturbation beam changes the refractive index of the c-GaN. The second one represents electro-optical phenomena in which two classical band-to-band transitions occur: the first transition for c-GaN layer in which the temperature dependence reveals defects in the film attributed to a hexagonal fraction estimated previously between 3% and 10%, and a second transition for the GaAs substrate that shows Franz–Keldysh oscillations.
UR - http://www.scopus.com/inward/record.url?scp=85092608529&partnerID=8YFLogxK
U2 - 10.1063/5.0007489
DO - 10.1063/5.0007489
M3 - Artículo
AN - SCOPUS:85092608529
SN - 0021-8979
VL - 128
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 12
M1 - 125706
ER -