TY - GEN
T1 - Injection-enhanced defect reactions in III-IV light emitting diodes
AU - Torchinskaya, T. V.
AU - Rybak, A. M.
PY - 1994
Y1 - 1994
N2 - Injection-enhanced defect transformations in GaP LEDs with active layer doped by N(GaP:N), or N, Zn, and O(GaP:N Zn-O), as well as AlGaAs:Zn, AlGaAs:Ge, and GaAs:Si LEDs were investigated both theoretically and experimentally. Four principal types of defect transformations were determined to take place in these LEDs. Their nature and parameters were determined from the comparison of theoretical and experimental data.
AB - Injection-enhanced defect transformations in GaP LEDs with active layer doped by N(GaP:N), or N, Zn, and O(GaP:N Zn-O), as well as AlGaAs:Zn, AlGaAs:Ge, and GaAs:Si LEDs were investigated both theoretically and experimentally. Four principal types of defect transformations were determined to take place in these LEDs. Their nature and parameters were determined from the comparison of theoretical and experimental data.
UR - http://www.scopus.com/inward/record.url?scp=0028196185&partnerID=8YFLogxK
M3 - Contribución a la conferencia
AN - SCOPUS:0028196185
SN - 0780313577
T3 - Annual Proceedings - Reliability Physics (Symposium)
SP - 454
EP - 457
BT - Annual Proceedings - Reliability Physics (Symposium)
PB - Publ by IEEE
T2 - Proceedings of the 32nd Annual International Reliability Physics Proceedings
Y2 - 12 April 1994 through 14 April 1994
ER -