TY - JOUR
T1 - Infrared radiation detection by a piezoelectric heterostructure at room temperature
AU - Kryshtab, T.
AU - Savkina, R.
AU - Sizov, F.
AU - Smirnov, A.
AU - Kladkevich, M.
AU - Samoylov, V.
PY - 2012/8
Y1 - 2012/8
N2 - We We proposed a HgCdTe-based infrared imaging device, operating in the middle (3-5 μm) and long wavelength (8-14 μm) infrared spectral range without cryogenic cooling to achieve useful performance on a level D* = 2.6×10 9 W-1cmHz 1/2. The principle of operation of the IR detector, investigated in this study, is based on the generation of piezoelectric charge produced by mechanical stresses in compound semiconductor heterostructure heated due to absorption of IR light.
AB - We We proposed a HgCdTe-based infrared imaging device, operating in the middle (3-5 μm) and long wavelength (8-14 μm) infrared spectral range without cryogenic cooling to achieve useful performance on a level D* = 2.6×10 9 W-1cmHz 1/2. The principle of operation of the IR detector, investigated in this study, is based on the generation of piezoelectric charge produced by mechanical stresses in compound semiconductor heterostructure heated due to absorption of IR light.
KW - HgCdTe
KW - HgCdTe/Si
KW - Piezoelectric effect
KW - Uncooled infrared detector
UR - http://www.scopus.com/inward/record.url?scp=84865793245&partnerID=8YFLogxK
U2 - 10.1002/pssc.201100608
DO - 10.1002/pssc.201100608
M3 - Artículo
SN - 1862-6351
VL - 9
SP - 1793
EP - 1796
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
IS - 8-9
ER -