TY - JOUR
T1 - Influence of the surrounding host in obtaining tunable and strong visible photoluminescence from silicon nanoparticles
AU - Santana, G.
AU - Monroy, B. M.
AU - Ortiz, A.
AU - Huerta, L.
AU - Alonso, J. C.
AU - Fandiño, J.
AU - Aguilar-Hernández, J.
AU - Hoyos, E.
AU - Cruz-Gandarilla, F.
AU - Contreras-Puentes, G.
N1 - Funding Information:
The authors acknowledge the technical assistance of J. Camacho, S. Jimenez, M.A. Canseco, and partial financial support for this work from CONACyT-México under project 47303-F and PAPIIT-UNAM under project IN-109803.
PY - 2006
Y1 - 2006
N2 - We have investigated the influence of the microstructure and chemistry of the surrounding host on the strong visible photoluminescence (PL) from silicon nanoclusters (nc-Si) embedded in three different silicon-based dielectric compounds: Six Ny: H,Cl, Six Ny Oz: H,Cl, and Six Oz: H,Cl, obtained from silicon nitride films deposited by Si H2 Cl2 N H3 H2 plasma-enhanced chemical vapor deposition at different growth pressures. A blueshift is found in the PL coming from the nc-Si as the content of oxygen in the surrounding host is increased, and a significant improvement in PL intensity is achieved when the nc-Si are well passivated with O instead of H. We discuss the PL behavior in terms of the quantum confinement model and passivation state of the nc-Si surface.
AB - We have investigated the influence of the microstructure and chemistry of the surrounding host on the strong visible photoluminescence (PL) from silicon nanoclusters (nc-Si) embedded in three different silicon-based dielectric compounds: Six Ny: H,Cl, Six Ny Oz: H,Cl, and Six Oz: H,Cl, obtained from silicon nitride films deposited by Si H2 Cl2 N H3 H2 plasma-enhanced chemical vapor deposition at different growth pressures. A blueshift is found in the PL coming from the nc-Si as the content of oxygen in the surrounding host is increased, and a significant improvement in PL intensity is achieved when the nc-Si are well passivated with O instead of H. We discuss the PL behavior in terms of the quantum confinement model and passivation state of the nc-Si surface.
UR - http://www.scopus.com/inward/record.url?scp=31544438879&partnerID=8YFLogxK
U2 - 10.1063/1.2164919
DO - 10.1063/1.2164919
M3 - Artículo
SN - 0003-6951
VL - 88
SP - 1
EP - 3
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 4
M1 - 041916
ER -