TY - JOUR
T1 - Influence of the substrate temperature on the formation of CuSbSe2 thin films grown by pulsed laser deposition
AU - Vázquez-Barragán, N. E.
AU - Rodríguez-Rosales, K.
AU - Colunga-Saucedo, M.
AU - Pérez-García, C. E.
AU - Santos-Cruz, J.
AU - Pérez-García, S. A.
AU - Contreras-Puente, G.
AU - de Moure-Flores, F.
N1 - Publisher Copyright:
© 2022 Elsevier Ltd and Techna Group S.r.l.
PY - 2022/12/1
Y1 - 2022/12/1
N2 - Cu–Sb–Se targets were obtained by solid-state reaction from Cu2Se and Sb2Se3 precursors annealed at different temperature and time conditions. The structural characterization showed that the optimum annealing conditions were at 400 °C for 3 h. Afterward, Cu–Sb–Se films onto glass/SnO2:F/ZnO/CdS substrates at 250 °C, 300 °C, 350 °C and 400 °C by pulsed laser deposition were deposited using the synthesized Cu–Sb–Se pellet as target. Cu–Sb–Se films were characterized through XRD, Raman spectroscopy, SEM, UV–Vis and XPS spectroscopy. The structural studies revealed that a substrate temperature of 350 °C promotes the CuSbSe2 phase with an orthorhombic nature and reduces the secondary phases. The best structural and optical properties are found at a substrate temperature of 350 °C, indicating that it can be used as an absorber layer in photovoltaic devices.
AB - Cu–Sb–Se targets were obtained by solid-state reaction from Cu2Se and Sb2Se3 precursors annealed at different temperature and time conditions. The structural characterization showed that the optimum annealing conditions were at 400 °C for 3 h. Afterward, Cu–Sb–Se films onto glass/SnO2:F/ZnO/CdS substrates at 250 °C, 300 °C, 350 °C and 400 °C by pulsed laser deposition were deposited using the synthesized Cu–Sb–Se pellet as target. Cu–Sb–Se films were characterized through XRD, Raman spectroscopy, SEM, UV–Vis and XPS spectroscopy. The structural studies revealed that a substrate temperature of 350 °C promotes the CuSbSe2 phase with an orthorhombic nature and reduces the secondary phases. The best structural and optical properties are found at a substrate temperature of 350 °C, indicating that it can be used as an absorber layer in photovoltaic devices.
KW - CuSbSe films
KW - Cu–Sb–Se target
KW - Pulsed laser deposition
KW - Solid-state reaction
UR - http://www.scopus.com/inward/record.url?scp=85135911989&partnerID=8YFLogxK
U2 - 10.1016/j.ceramint.2022.08.092
DO - 10.1016/j.ceramint.2022.08.092
M3 - Artículo
AN - SCOPUS:85135911989
SN - 0272-8842
VL - 48
SP - 35031
EP - 35038
JO - Ceramics International
JF - Ceramics International
IS - 23
ER -