Influence of the HCIO4 concentration over the morphology and growth of TiO2 anodic porous films formed in 5 mM HF/xM HCIO 4 (0.05 M ≤x≤ 1M)

Próspero Acevedo-Peña; I. González

doi:10.1149/1.3660619

Influence of the HCIO₄ concentration over the morphology and growth of TiO₂ anodic porous films formed in 5 mM HF/xM HCIO ₄ (0.05 M ≤x≤ 1M)

Próspero Acevedo-Peña, I. González

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

In the present work the effect of the HCIO₄ concentration over the morphology and growth of anodic Ti oxide films in fluoride containing electrolytes is studied. The voltammetric behavior of the Ti is not considerably affected by HCIO₄ concentration, showing a current plateau in a high potential range in which the anodic films were potentiostatically grown (6.5 V). Even when the SEM images evidenced a decrease in pore diameter with the increase of perchloric acid concentration, the recorded chronoamperograms did not show any considerable changes in the growing of the films. However, in the EIS spectra, it is observed a modification of the high frequency components, provoked by the detriment in the oxide film resistance and capacitance, allowing the correlation between the barrier layer thickness and resistance with the pore diameter of the external porous layer formed.

Original language	English
Title of host publication	MES 2011
Subtitle of host publication	Electrochemistry as a Tool for Sustainable Development
Publisher	Electrochemical Society Inc.
Pages	257-265
Number of pages	9
Edition	1
ISBN (Electronic)	9781566779401
ISBN (Print)	9781607682981
DOIs	https://doi.org/10.1149/1.3660619
State	Published - 2011
Externally published	Yes
Event	26th National Meeting of the Mexican Electrochemical Society, MES 2011 and the 4th Meeting of the ECS Mexican Section - 220th ECS Meeting - Mexico City, Mexico Duration: 29 May 2011 → 3 Jun 2011

Publication series

Name	ECS Transactions
Number	1
Volume	36
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	26th National Meeting of the Mexican Electrochemical Society, MES 2011 and the 4th Meeting of the ECS Mexican Section - 220th ECS Meeting
Country/Territory	Mexico
City	Mexico City
Period	29/05/11 → 3/06/11

Access to Document

10.1149/1.3660619

Cite this

Acevedo-Peña, P., & González, I. (2011). Influence of the HCIO₄ concentration over the morphology and growth of TiO₂ anodic porous films formed in 5 mM HF/xM HCIO ₄ (0.05 M ≤x≤ 1M). In MES 2011: Electrochemistry as a Tool for Sustainable Development (1 ed., pp. 257-265). (ECS Transactions; Vol. 36, No. 1). Electrochemical Society Inc.. https://doi.org/10.1149/1.3660619

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abstract = "In the present work the effect of the HCIO4 concentration over the morphology and growth of anodic Ti oxide films in fluoride containing electrolytes is studied. The voltammetric behavior of the Ti is not considerably affected by HCIO4 concentration, showing a current plateau in a high potential range in which the anodic films were potentiostatically grown (6.5 V). Even when the SEM images evidenced a decrease in pore diameter with the increase of perchloric acid concentration, the recorded chronoamperograms did not show any considerable changes in the growing of the films. However, in the EIS spectra, it is observed a modification of the high frequency components, provoked by the detriment in the oxide film resistance and capacitance, allowing the correlation between the barrier layer thickness and resistance with the pore diameter of the external porous layer formed.",

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Acevedo-Peña, P & González, I 2011, Influence of the HCIO₄ concentration over the morphology and growth of TiO₂ anodic porous films formed in 5 mM HF/xM HCIO ₄ (0.05 M ≤x≤ 1M). in MES 2011: Electrochemistry as a Tool for Sustainable Development. 1 edn, ECS Transactions, no. 1, vol. 36, Electrochemical Society Inc., pp. 257-265, 26th National Meeting of the Mexican Electrochemical Society, MES 2011 and the 4th Meeting of the ECS Mexican Section - 220th ECS Meeting, Mexico City, Mexico, 29/05/11. https://doi.org/10.1149/1.3660619

Influence of the HCIO₄ concentration over the morphology and growth of TiO₂ anodic porous films formed in 5 mM HF/xM HCIO ₄ (0.05 M ≤x≤ 1M). / Acevedo-Peña, Próspero; González, I.
MES 2011: Electrochemistry as a Tool for Sustainable Development. 1. ed. Electrochemical Society Inc., 2011. p. 257-265 (ECS Transactions; Vol. 36, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - In the present work the effect of the HCIO4 concentration over the morphology and growth of anodic Ti oxide films in fluoride containing electrolytes is studied. The voltammetric behavior of the Ti is not considerably affected by HCIO4 concentration, showing a current plateau in a high potential range in which the anodic films were potentiostatically grown (6.5 V). Even when the SEM images evidenced a decrease in pore diameter with the increase of perchloric acid concentration, the recorded chronoamperograms did not show any considerable changes in the growing of the films. However, in the EIS spectra, it is observed a modification of the high frequency components, provoked by the detriment in the oxide film resistance and capacitance, allowing the correlation between the barrier layer thickness and resistance with the pore diameter of the external porous layer formed.

AB - In the present work the effect of the HCIO4 concentration over the morphology and growth of anodic Ti oxide films in fluoride containing electrolytes is studied. The voltammetric behavior of the Ti is not considerably affected by HCIO4 concentration, showing a current plateau in a high potential range in which the anodic films were potentiostatically grown (6.5 V). Even when the SEM images evidenced a decrease in pore diameter with the increase of perchloric acid concentration, the recorded chronoamperograms did not show any considerable changes in the growing of the films. However, in the EIS spectra, it is observed a modification of the high frequency components, provoked by the detriment in the oxide film resistance and capacitance, allowing the correlation between the barrier layer thickness and resistance with the pore diameter of the external porous layer formed.

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