TY - GEN
T1 - Influence of oxygen on the crystallization process in Ge:Sb:Te:O films
AU - Morales-Sánchez, E.
AU - González-Hernández, J.
AU - Herrera-Fierro, P.
AU - Chao, B.
AU - Kovalenko, Yu
AU - Prokhorov, E.
PY - 2006
Y1 - 2006
N2 - Ge:Sb:Te thin films have been studied extensively due to their application in phase-change optical memory technology. In this work Ge:Sb:Te:O films with oxygen In the range between 2 to 28 atomic %, are analyzed using Xray diffraction and XPS measurements. The location of the oxygen in the structure of these films has been deduced from these measurements. Experimental results have shown that in films with oxygen content below 10 atomic %, Te, Sb and most of Ge are in metallic state and the free oxygen is located at the tetrahedral interstitial sites. In these films the oxygen acts as nucleation center in the process of crystallization. In films with higher contents of oxygen tellurium is in metallic state while some of the germanium and antimony form amorphous oxide and due to the deficit of germanium and antimony the amorphous films crystallized into the Sb2Te3 rhombohedral phase with the segregation of crystalline Te. From this characteristics GeSbTe-O can be used as active material in multi level optical memories.
AB - Ge:Sb:Te thin films have been studied extensively due to their application in phase-change optical memory technology. In this work Ge:Sb:Te:O films with oxygen In the range between 2 to 28 atomic %, are analyzed using Xray diffraction and XPS measurements. The location of the oxygen in the structure of these films has been deduced from these measurements. Experimental results have shown that in films with oxygen content below 10 atomic %, Te, Sb and most of Ge are in metallic state and the free oxygen is located at the tetrahedral interstitial sites. In these films the oxygen acts as nucleation center in the process of crystallization. In films with higher contents of oxygen tellurium is in metallic state while some of the germanium and antimony form amorphous oxide and due to the deficit of germanium and antimony the amorphous films crystallized into the Sb2Te3 rhombohedral phase with the segregation of crystalline Te. From this characteristics GeSbTe-O can be used as active material in multi level optical memories.
KW - Chrystallization process
KW - Thin films
KW - X-ray
UR - http://www.scopus.com/inward/record.url?scp=42749098801&partnerID=8YFLogxK
U2 - 10.1109/ICEEE.2006.251847
DO - 10.1109/ICEEE.2006.251847
M3 - Contribución a la conferencia
AN - SCOPUS:42749098801
SN - 1424404037
SN - 9781424404032
T3 - 2006 3rd International Conference on Electrical and Electronics Engineering
BT - 2006 3rd International Conference on Electrical and Electronics Engineering
T2 - 2006 3rd International Conference on Electrical and Electronics Engineering
Y2 - 6 September 2006 through 8 September 2006
ER -