Abstract
Quantum well (QW) structures of Al xGa 1-xAs/GaAs with x = 0.3 were characterized by photoluminescence spectroscopy (PL) with circularly polarized excitation at a temperature of 1.6 K. The samples contained three QWs with thickness of 7, 5, and 3 nm grown by molecular beam epitaxy (MBE) on a 500 nm thick buffer layer. Four samples with identical geometry but different surface treatments (in-situ etching the GaAs buffer with Cl 2 at different temperatures, and air-exposed buffer, respectively) were compared. The degree of circular polarization of the PL and its decrease in a magnetic field applied perpendicularly to the direction of propagation of light (Hanle effect) allows the determination of the interband lifetime τ and the spin lifetime τ s of the electrons. These lifetimes were different in the different QWs and strongly depend on the growth procedure.
Translated title of the contribution | Influencia de la preparación de la superficie del tampón en la calidad de los pozos cuánticos de Al x Ga 1-x As/GaAs estudiados mediante experimentos de orientación óptica |
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Original language | English |
Pages (from-to) | 1157-1161 |
Number of pages | 5 |
Journal | Journal of Materials Science: Materials in Electronics |
Volume | 18 |
Issue number | 11 |
DOIs | |
State | Published - Nov 2007 |