TY - GEN
T1 - Influence of a thin intrinsic a-Si:H layer on the I-V characteristics of a-Si:H/c-Si diodes made by hot-wire CVD
AU - Hernández-Como, Norberto
AU - Morales-Acevedo, Arturo
AU - Matsumoto, Y.
PY - 2009
Y1 - 2009
N2 - P-type amorphous silicon was deposited on crystalline n-type silicon substrates to obtain hetero-junction diodes. Additionally, a thin intrinsic amorphous silicon layer was inserted between both the p-type film and the n-type substrate to study its passivation effect on the c-Si surface. We studied the influence of the quality of the amorphous films upon the performance of the hetero-junction diodes. In particular, the diode ideality factor and the saturation current density were determined by measuring the current-voltage characteristics in dark conditions. The amorphous films were obtained by the hot wire chemical vapor deposition (HWCVD) technique, using a tungsten filament and SiH4, H2 and B2H6, where the deposition parameters such as gas flow, substrate temperature and filament temperature were varied. It is be shown that the presence of the intrinsic layer is fundamental for making good diodes, since devices made without this film cause the diodes to have high saturation current density and ideality factor (3 x 10-5 A/cm2, n > 8) as compared to diodes with a good intrinsic layer (5 x 10-9 A/cm2, n = 1.4). The results obtained are encouraging, but the quality of the intrinsic films still should be improved for applying them to HIT (Heterojunction with Intrinsic Thin layer) solar cells.
AB - P-type amorphous silicon was deposited on crystalline n-type silicon substrates to obtain hetero-junction diodes. Additionally, a thin intrinsic amorphous silicon layer was inserted between both the p-type film and the n-type substrate to study its passivation effect on the c-Si surface. We studied the influence of the quality of the amorphous films upon the performance of the hetero-junction diodes. In particular, the diode ideality factor and the saturation current density were determined by measuring the current-voltage characteristics in dark conditions. The amorphous films were obtained by the hot wire chemical vapor deposition (HWCVD) technique, using a tungsten filament and SiH4, H2 and B2H6, where the deposition parameters such as gas flow, substrate temperature and filament temperature were varied. It is be shown that the presence of the intrinsic layer is fundamental for making good diodes, since devices made without this film cause the diodes to have high saturation current density and ideality factor (3 x 10-5 A/cm2, n > 8) as compared to diodes with a good intrinsic layer (5 x 10-9 A/cm2, n = 1.4). The results obtained are encouraging, but the quality of the intrinsic films still should be improved for applying them to HIT (Heterojunction with Intrinsic Thin layer) solar cells.
KW - Amorphous silicon
KW - HWCVD
KW - Heterojunction
UR - http://www.scopus.com/inward/record.url?scp=77949789034&partnerID=8YFLogxK
U2 - 10.1109/ICEEE.2009.5393433
DO - 10.1109/ICEEE.2009.5393433
M3 - Contribución a la conferencia
AN - SCOPUS:77949789034
SN - 9781424446896
T3 - 2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009
BT - 2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009
T2 - 2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2009
Y2 - 10 November 2009 through 13 November 2009
ER -