Abstract
The high resolution X ray diffraction (HR-XRD) diagrams have been studied in the GaAs/InxGa1-xAs /In0.15Ga 0.85As/GaAs quantum wells with embedded InAs quantum dots (QDs) in dependence on the composition of the capping InxGa1-xAs layers. The parameter x in capping InxGa1-xAs layers varied from the range 0.10-0.25. These technological changes have been accompanied by the variation non-monotonously of InAs QD emission. Numerical simulation of HR-XRD results has shown that the level of elastic strains and the composition of quantum layers vary none monotonously in studied QD structures. Simultaneously it was revealed that the process of Ga/In inter diffusion at the InxGa1-xAs/InAs QD interface are characterized by the dependence non monotonous versus parameter x in capping InxGa 1-xAs layers. The physical reasons of the mentioned optical and structural effects in studied structures have been discussed.
Original language | English |
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Pages (from-to) | 13-18 |
Number of pages | 6 |
Journal | Materials Research Society Symposium Proceedings |
Volume | 1617 |
DOIs | |
State | Published - 2013 |
Event | 22nd International Materials Research Congress, IMRC 2013 - Cancun, Mexico Duration: 11 Aug 2013 → 15 Aug 2013 |
Keywords
- InAs quantum dots
- XRD
- luminescence