@inproceedings{44fe5a58033847728ec473cd7a9ae0ae,
title = "High speed Si/SiGe and Ge/SiGe MODFETs",
abstract = "The high frequency and noise performances of n- and p-SiGe based MODFETs are reviewed. Their excellent HF and low noise behavior makes them well suited for RF mobile communications. We discuss their physical modeling, design optimization and self-heating effects.",
keywords = "Capacitance, Circuit noise, Design optimization, Frequency, Germanium silicon alloys, HEMTs, MODFETs, Scattering parameters, Silicon germanium, Substrates",
author = "F. Aniel and M. Enciso-Aguilar and N. Zerounian and P. Crozat and R. Adde and T. Hackbarth and Herzog, {J. H.} and U. K{\"o}nig",
note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 4th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems ; Conference date: 11-04-2003",
year = "2003",
doi = "10.1109/SMIC.2003.1196661",
language = "Ingl{\'e}s",
series = "2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "29--32",
editor = "Ponchak, {George E.}",
booktitle = "2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers",
address = "Estados Unidos",
}