TY - JOUR
T1 - High-performance multipulse rectifier with single-transistor active injection
AU - Araujo-Vargas, Ismael
AU - Forsyth, Andrew J.
AU - Chivite-Zabalza, F. Javier
N1 - Funding Information:
Manuscript received December 13, 2006; revised March 4, 2007. This work was supported by the Goodrich Corporation Electromagnetic Systems Technical Center, Birmingham, U.K., the National Council of Science and Technology (CONACyT), and the National Polytechnic Institute (IPN) of Mexico. Recommended for publication by Associate Editor B. Wu.
PY - 2008/5
Y1 - 2008/5
N2 - A three-phase, multilevel rectifier using active voltage injection with one MOSFET device is presented. The injector consists of a bidirectional switch that modifies the behavior of a 12-pulse rectifier resulting in either 24-pulse or multilevel pulsewidth-modulated (PWM) operation. The resultant input currents are almost sinusoidal, the line current THD being 2.36% for 24-pulse operation and 1.06% for PWM operation. The MOSFET current is 2.9% of the load current. The circuit operation, idealized waveforms and modulation strategy are explained and experimental results are presented.
AB - A three-phase, multilevel rectifier using active voltage injection with one MOSFET device is presented. The injector consists of a bidirectional switch that modifies the behavior of a 12-pulse rectifier resulting in either 24-pulse or multilevel pulsewidth-modulated (PWM) operation. The resultant input currents are almost sinusoidal, the line current THD being 2.36% for 24-pulse operation and 1.06% for PWM operation. The MOSFET current is 2.9% of the load current. The circuit operation, idealized waveforms and modulation strategy are explained and experimental results are presented.
KW - High-power factor rectification
KW - Three-phase multipulse rectifier
UR - http://www.scopus.com/inward/record.url?scp=44449135931&partnerID=8YFLogxK
U2 - 10.1109/TPEL.2008.920882
DO - 10.1109/TPEL.2008.920882
M3 - Artículo
SN - 0885-8993
VL - 23
SP - 1299
EP - 1308
JO - IEEE Transactions on Power Electronics
JF - IEEE Transactions on Power Electronics
IS - 3
ER -