High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET

Frederic Aniel; M. Enciso-Aguilar; L. Giguerre; P. Crozat; R. Adde; T. Mack; U. Seiler; Th Hackbarth; H. J. Herzog; U. König; B. Raynor

doi:10.1016/S0038-1101(02)00208-3

High performance 100 nm T-gate strained Si/Si_0.6Ge_0.4 n-MODFET

Frederic Aniel, M. Enciso-Aguilar, L. Giguerre, P. Crozat, R. Adde, T. Mack, U. Seiler, Th Hackbarth, H. J. Herzog, U. König, B. Raynor

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

100 nm T-gate strained Si/Si_0.6Ge_0.4 n-MODFETs have reached new record cut-off frequency f_T of 74 GHz (105 GHz), with maximum oscillation frequency f_max of 107 GHz (170 GHz) at temperatures 300 K (50 K). Moreover they show a low noise figure NF_min of 0.4 dB and noise resistance R_n of 52 Ω at 2.5 GHz and 300 K. The dependence of electric parameters and RF performances of the device on biases and temperature is presented. Experimental results are compared with physical simulations at short gate lengths to analyze carrier transport and further device optimization.

Original language	English
Pages (from-to)	283-289
Number of pages	7
Journal	Solid-State Electronics
Volume	47
Issue number	2
DOIs	https://doi.org/10.1016/S0038-1101(02)00208-3
State	Published - Feb 2003
Externally published	Yes

Keywords

Heterojunctions
MODFET
Noise
Quantum well
SiGe

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10.1016/S0038-1101(02)00208-3

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title = "High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET",

abstract = "100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFETs have reached new record cut-off frequency fT of 74 GHz (105 GHz), with maximum oscillation frequency fmax of 107 GHz (170 GHz) at temperatures 300 K (50 K). Moreover they show a low noise figure NFmin of 0.4 dB and noise resistance Rn of 52 Ω at 2.5 GHz and 300 K. The dependence of electric parameters and RF performances of the device on biases and temperature is presented. Experimental results are compared with physical simulations at short gate lengths to analyze carrier transport and further device optimization.",

keywords = "Heterojunctions, MODFET, Noise, Quantum well, SiGe",

author = "Frederic Aniel and M. Enciso-Aguilar and L. Giguerre and P. Crozat and R. Adde and T. Mack and U. Seiler and Th Hackbarth and Herzog, {H. J.} and U. K{\"o}nig and B. Raynor",

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TY - JOUR

T1 - High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET

AU - Aniel, Frederic

AU - Enciso-Aguilar, M.

AU - Giguerre, L.

AU - Crozat, P.

AU - Adde, R.

AU - Mack, T.

AU - Seiler, U.

AU - Hackbarth, Th

AU - Herzog, H. J.

AU - König, U.

AU - Raynor, B.

PY - 2003/2

Y1 - 2003/2

N2 - 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFETs have reached new record cut-off frequency fT of 74 GHz (105 GHz), with maximum oscillation frequency fmax of 107 GHz (170 GHz) at temperatures 300 K (50 K). Moreover they show a low noise figure NFmin of 0.4 dB and noise resistance Rn of 52 Ω at 2.5 GHz and 300 K. The dependence of electric parameters and RF performances of the device on biases and temperature is presented. Experimental results are compared with physical simulations at short gate lengths to analyze carrier transport and further device optimization.

AB - 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFETs have reached new record cut-off frequency fT of 74 GHz (105 GHz), with maximum oscillation frequency fmax of 107 GHz (170 GHz) at temperatures 300 K (50 K). Moreover they show a low noise figure NFmin of 0.4 dB and noise resistance Rn of 52 Ω at 2.5 GHz and 300 K. The dependence of electric parameters and RF performances of the device on biases and temperature is presented. Experimental results are compared with physical simulations at short gate lengths to analyze carrier transport and further device optimization.

KW - Heterojunctions

KW - MODFET

KW - Noise

KW - Quantum well

KW - SiGe

UR - http://www.scopus.com/inward/record.url?scp=0037290322&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(02)00208-3

DO - 10.1016/S0038-1101(02)00208-3

M3 - Artículo

AN - SCOPUS:0037290322

SN - 0038-1101

VL - 47

SP - 283

EP - 289

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 2

ER -

High performance 100 nm T-gate strained Si/Si_0.6Ge_0.4 n-MODFET

Abstract

Keywords

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