@inproceedings{1b2498705c994ffea8fa0fc67bd88d7a,
title = "HF noise performance and modelling of SiGe HFETs",
abstract = "SiGe HFETs have reached in recent years good HF noise performance. We report here an investigation about the contribution of electrostatic parasitics on the noise performance using a PRC electrical model for the intrinsic device. A strong reduction of the capacitance due to gate shape improvement and technological optimization should strongly enhance all the HF performance.",
keywords = "Electrostatic parasitic capacitances, HFET, Noise, SiGe",
author = "M. Enciso and N. Zerounian and P. Crozat and T. Hackbarth and Herzog, {J. H.} and F. Aniel",
year = "2005",
month = aug,
day = "25",
doi = "10.1063/1.2036751",
language = "Ingl{\'e}s",
isbn = "0735402671",
series = "AIP Conference Proceedings",
pages = "287--290",
booktitle = "NOISE AND FLUCTUATIONS",
note = "NOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005 ; Conference date: 19-09-2005 Through 23-09-2005",
}