TY - GEN
T1 - HF noise behavior and small signal modeling of strained Si HFETs
AU - Enciso-Aguilar, Mauro
AU - Rodríguez, Manuel
AU - Hackbarth, Thomas
AU - Zerounian, Nicolas
AU - Aniel, Frédéric
PY - 2006
Y1 - 2006
N2 - High Frequency (HF) noise performance of strained Si HFETs is studied. Noise parameter of devices with buried strained pure Si channel fabricated on several strain relieved virtual substrate (SRB) are presented. The influence of such SRB on device noise performance is estimated by a proper noise de-embedding technique. The impact of device gate length on noise parameters is presented. High frequency noise properties measured in the 2.5-12 GHz frequency range are simulated using Pospieszalski's and Van Der Ziel's noise models by means of the small signal equivalent circuit linked to parasitic pads, lines and substrate losses. Good agreement obtained between experimental data and modeling enables the investigation of the main contributions to n-HFET noise properties. Detrimental effects that negatively impact the microwave noise behavior are elucidated and some alternatives to overwhelm them are proposed. Noise modeling is useful to predict further improvements of RF and noise performance when shrinking the gate length below 100 nm.
AB - High Frequency (HF) noise performance of strained Si HFETs is studied. Noise parameter of devices with buried strained pure Si channel fabricated on several strain relieved virtual substrate (SRB) are presented. The influence of such SRB on device noise performance is estimated by a proper noise de-embedding technique. The impact of device gate length on noise parameters is presented. High frequency noise properties measured in the 2.5-12 GHz frequency range are simulated using Pospieszalski's and Van Der Ziel's noise models by means of the small signal equivalent circuit linked to parasitic pads, lines and substrate losses. Good agreement obtained between experimental data and modeling enables the investigation of the main contributions to n-HFET noise properties. Detrimental effects that negatively impact the microwave noise behavior are elucidated and some alternatives to overwhelm them are proposed. Noise modeling is useful to predict further improvements of RF and noise performance when shrinking the gate length below 100 nm.
UR - http://www.scopus.com/inward/record.url?scp=34250764227&partnerID=8YFLogxK
U2 - 10.1109/ICCDCS.2006.250861
DO - 10.1109/ICCDCS.2006.250861
M3 - Contribución a la conferencia
AN - SCOPUS:34250764227
SN - 1424400422
SN - 9781424400423
T3 - Proceedings of the Sixth International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2006 - Final Program and Technical Digest
SP - 201
EP - 206
BT - Proceedings of the Sixth International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2006 - Final Program and Technical Digest
T2 - 6th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2006
Y2 - 26 April 2006 through 28 April 2006
ER -