TY - JOUR
T1 - Growth of Cd(1-x)ZnxTe epitaxial layers by isothermal closed space sublimation
AU - Tobeñas, S.
AU - Larramendi, E. M.
AU - Purón, E.
AU - De Melo, O.
AU - Cruz-Gandarilla, F.
AU - Hesiquio-Garduño, M.
AU - Tamura, M.
N1 - Funding Information:
This work was partially supported by the Alma Mater grant of the University of Havana. MT thanks the Cathedra Patrimonial Program of the CONACyT, Mexico. EML thanks the CLAF-ICTP doctoral fellowship. We also acknowledge S. De Roux and M. Guerrero for technical assistance.
PY - 2002/1
Y1 - 2002/1
N2 - The growth and structural characterization of Cd1-xZnxTe epitaxial films on (100) GaAs substrates is reported. The samples were obtained by a novel isothermal closed space sublimation technique, which was previously used for the growth of ZnTe in atomic layer epitaxy regime. For growing the films, a GaAs substrate is exposed alternately to the elemental sources (Cd,Zn,Te) at isothermal condition employing a closed space geometry. Eleven different ZnTe:CdTe cycle combinations were done to obtain different Zn compositions. The Zn molar fractions were measured by X-ray and transmission electron diffraction patterns that also revealed the epitaxial quality of the films. Influence of the growth parameters on the composition and the thickness of the films is discussed.
AB - The growth and structural characterization of Cd1-xZnxTe epitaxial films on (100) GaAs substrates is reported. The samples were obtained by a novel isothermal closed space sublimation technique, which was previously used for the growth of ZnTe in atomic layer epitaxy regime. For growing the films, a GaAs substrate is exposed alternately to the elemental sources (Cd,Zn,Te) at isothermal condition employing a closed space geometry. Eleven different ZnTe:CdTe cycle combinations were done to obtain different Zn compositions. The Zn molar fractions were measured by X-ray and transmission electron diffraction patterns that also revealed the epitaxial quality of the films. Influence of the growth parameters on the composition and the thickness of the films is discussed.
KW - A3. Vapor phase epitaxy
KW - B1. Alloys
KW - B2. Semiconducting II-VI materials
UR - http://www.scopus.com/inward/record.url?scp=0036131602&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(01)01710-9
DO - 10.1016/S0022-0248(01)01710-9
M3 - Artículo
SN - 0022-0248
VL - 234
SP - 311
EP - 317
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 2-3
ER -