Growth mechanism and physical properties of the type-I In0.145Ga0.855AsySb1−y/GaSb alloys with low As content for near infrared applications

Y. L. Casallas-Moreno, G. Villa-Martínez, M. Ramírez-López, P. Rodríguez-Fragoso, M. L. Gómez-Herrera, M. Pérez-González, A. Escobosa-Echavarría, S. A. Tomás, J. L. Herrera-Pérez, J. G. Mendoza-Álvarez

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