Growth and characterization of silicon nanocrystals obtained by ion implantation

G. O. Dias; S. N.M. Mestanza; J. E.C. Queiroz; E. S.V.P. Marins; I. Doi; E. Rodriguez; D. C.B. Tejero

Growth and characterization of silicon nanocrystals obtained by ion implantation

G. O. Dias, S. N.M. Mestanza, J. E.C. Queiroz, E. S.V.P. Marins, I. Doi, E. Rodriguez, D. C.B. Tejero

Research output: Contribution to conference › Paper › peer-review

Abstract

Experimental results on visible and near infrared photoluminescence (PL) at room temperature, Fourier transform infrared (FTIR) and high-resolution transmission electron microscopy (HRTEM), from Si nanocrystals (nc-Si) embedded in a SiO₂ matrix, are reported herein. The samples containing nc-Si was obtained by ion implantation and annealing of thermally grown SiO ₂, on a (100) silicon wafer. PL was measured for two groups of samples. One group consists of samples obtained by different implantation doses and annealing times. Another group consists of samples obtained by an unique dose and annealing time, subsequently treated with post-annealing gas treatments. For the first group, a peak at 663nm (1.87eV) was observed for all implantation doses and annealing times. Samples of the second group, treated with post-annealing at 450°C in environments of N₂, H₂ and forming gas (FG) showed an increasing of luminescence peak centered at 790nm (1.57eV). The post-annealing treatments showed that H₂ gas has a better performance for enhancing the PL intensity.

Original language	English
Pages	297-303
Number of pages	7
State	Published - 2005
Externally published	Yes
Event	20th Symposium on Microelectronics Technology and Devices, SBMicro 2005 - Florianopolis, Brazil Duration: 4 Sep 2005 → 7 Sep 2005

Conference

Conference	20th Symposium on Microelectronics Technology and Devices, SBMicro 2005
Country/Territory	Brazil
City	Florianopolis
Period	4/09/05 → 7/09/05

Cite this

@conference{caf7d9c630894d4dbadfaae7f420cb7a,

title = "Growth and characterization of silicon nanocrystals obtained by ion implantation",

abstract = "Experimental results on visible and near infrared photoluminescence (PL) at room temperature, Fourier transform infrared (FTIR) and high-resolution transmission electron microscopy (HRTEM), from Si nanocrystals (nc-Si) embedded in a SiO2 matrix, are reported herein. The samples containing nc-Si was obtained by ion implantation and annealing of thermally grown SiO 2, on a (100) silicon wafer. PL was measured for two groups of samples. One group consists of samples obtained by different implantation doses and annealing times. Another group consists of samples obtained by an unique dose and annealing time, subsequently treated with post-annealing gas treatments. For the first group, a peak at 663nm (1.87eV) was observed for all implantation doses and annealing times. Samples of the second group, treated with post-annealing at 450°C in environments of N2, H2 and forming gas (FG) showed an increasing of luminescence peak centered at 790nm (1.57eV). The post-annealing treatments showed that H2 gas has a better performance for enhancing the PL intensity.",

author = "Dias, {G. O.} and Mestanza, {S. N.M.} and Queiroz, {J. E.C.} and Marins, {E. S.V.P.} and I. Doi and E. Rodriguez and Tejero, {D. C.B.}",

year = "2005",

language = "Ingl{\'e}s",

pages = "297--303",

note = "20th Symposium on Microelectronics Technology and Devices, SBMicro 2005 ; Conference date: 04-09-2005 Through 07-09-2005",

}

TY - CONF

T1 - Growth and characterization of silicon nanocrystals obtained by ion implantation

AU - Dias, G. O.

AU - Mestanza, S. N.M.

AU - Queiroz, J. E.C.

AU - Marins, E. S.V.P.

AU - Doi, I.

AU - Rodriguez, E.

AU - Tejero, D. C.B.

PY - 2005

Y1 - 2005

N2 - Experimental results on visible and near infrared photoluminescence (PL) at room temperature, Fourier transform infrared (FTIR) and high-resolution transmission electron microscopy (HRTEM), from Si nanocrystals (nc-Si) embedded in a SiO2 matrix, are reported herein. The samples containing nc-Si was obtained by ion implantation and annealing of thermally grown SiO 2, on a (100) silicon wafer. PL was measured for two groups of samples. One group consists of samples obtained by different implantation doses and annealing times. Another group consists of samples obtained by an unique dose and annealing time, subsequently treated with post-annealing gas treatments. For the first group, a peak at 663nm (1.87eV) was observed for all implantation doses and annealing times. Samples of the second group, treated with post-annealing at 450°C in environments of N2, H2 and forming gas (FG) showed an increasing of luminescence peak centered at 790nm (1.57eV). The post-annealing treatments showed that H2 gas has a better performance for enhancing the PL intensity.

AB - Experimental results on visible and near infrared photoluminescence (PL) at room temperature, Fourier transform infrared (FTIR) and high-resolution transmission electron microscopy (HRTEM), from Si nanocrystals (nc-Si) embedded in a SiO2 matrix, are reported herein. The samples containing nc-Si was obtained by ion implantation and annealing of thermally grown SiO 2, on a (100) silicon wafer. PL was measured for two groups of samples. One group consists of samples obtained by different implantation doses and annealing times. Another group consists of samples obtained by an unique dose and annealing time, subsequently treated with post-annealing gas treatments. For the first group, a peak at 663nm (1.87eV) was observed for all implantation doses and annealing times. Samples of the second group, treated with post-annealing at 450°C in environments of N2, H2 and forming gas (FG) showed an increasing of luminescence peak centered at 790nm (1.57eV). The post-annealing treatments showed that H2 gas has a better performance for enhancing the PL intensity.

UR - http://www.scopus.com/inward/record.url?scp=31744452009&partnerID=8YFLogxK

M3 - Artículo

AN - SCOPUS:31744452009

SP - 297

EP - 303

T2 - 20th Symposium on Microelectronics Technology and Devices, SBMicro 2005

Y2 - 4 September 2005 through 7 September 2005

ER -

Growth and characterization of silicon nanocrystals obtained by ion implantation

Abstract

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