Ground and excited state photoluminescence mapping on InAs/InGaAs quantum dot structures

T. V. Torchynska; E. Velázquez Lozada; M. Dybiec; S. Ostapenko; P. G. Eliseev; A. Stintz; K. J. Malloy; R. Pena Sierra

doi:10.1142/S0219581X07004912

Ground and excited state photoluminescence mapping on InAs/InGaAs quantum dot structures

T. V. Torchynska, E. Velázquez Lozada, M. Dybiec, S. Ostapenko, P. G. Eliseev, A. Stintz, K. J. Malloy, R. Pena Sierra

Research output: Contribution to journal › Article › peer-review

Abstract

This paper presents the photoluminescence study at 12 K and scanning photoluminescence spectroscopy investigation of the ground and excited states at 80 and 300 K on InAs QDs inserted in In_0.15 Ga_0.85 As/Ga As QW structures and created at different QD growth temperatures. It is shown that investigated structures are characterized by the long range variation of an average QD size in QD ensemble across the wafer. This long range QD size inhomogeneity was used for investigation of the multi-excited state energy trend versus ground state energy (or QD sizes).

Original language	English
Pages (from-to)	383-387
Number of pages	5
Journal	International Journal of Nanoscience
Volume	6
Issue number	5
DOIs	https://doi.org/10.1142/S0219581X07004912
State	Published - Oct 2007

Keywords

InAs quantum dots
Multi-excited states
Photoluminescence

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title = "Ground and excited state photoluminescence mapping on InAs/InGaAs quantum dot structures",

abstract = "This paper presents the photoluminescence study at 12 K and scanning photoluminescence spectroscopy investigation of the ground and excited states at 80 and 300 K on InAs QDs inserted in In0.15 Ga0.85 As/Ga As QW structures and created at different QD growth temperatures. It is shown that investigated structures are characterized by the long range variation of an average QD size in QD ensemble across the wafer. This long range QD size inhomogeneity was used for investigation of the multi-excited state energy trend versus ground state energy (or QD sizes).",

keywords = "InAs quantum dots, Multi-excited states, Photoluminescence",

author = "Torchynska, {T. V.} and {Vel{\'a}zquez Lozada}, E. and M. Dybiec and S. Ostapenko and Eliseev, {P. G.} and A. Stintz and Malloy, {K. J.} and {Pena Sierra}, R.",

note = "Funding Information: The work was supported by NSF award #DMI-0306376 and by CONACYT (project N 42436-Y), as well as by International Cooperation NSF-CONACYT Program and CGPI-IPN Mexico.",

year = "2007",

month = oct,

doi = "10.1142/S0219581X07004912",

language = "Ingl{\'e}s",

volume = "6",

pages = "383--387",

journal = "International Journal of Nanoscience",

issn = "0219-581X",

number = "5",

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TY - JOUR

T1 - Ground and excited state photoluminescence mapping on InAs/InGaAs quantum dot structures

AU - Torchynska, T. V.

AU - Velázquez Lozada, E.

AU - Dybiec, M.

AU - Ostapenko, S.

AU - Eliseev, P. G.

AU - Stintz, A.

AU - Malloy, K. J.

AU - Pena Sierra, R.

N1 - Funding Information: The work was supported by NSF award #DMI-0306376 and by CONACYT (project N 42436-Y), as well as by International Cooperation NSF-CONACYT Program and CGPI-IPN Mexico.

PY - 2007/10

Y1 - 2007/10

N2 - This paper presents the photoluminescence study at 12 K and scanning photoluminescence spectroscopy investigation of the ground and excited states at 80 and 300 K on InAs QDs inserted in In0.15 Ga0.85 As/Ga As QW structures and created at different QD growth temperatures. It is shown that investigated structures are characterized by the long range variation of an average QD size in QD ensemble across the wafer. This long range QD size inhomogeneity was used for investigation of the multi-excited state energy trend versus ground state energy (or QD sizes).

AB - This paper presents the photoluminescence study at 12 K and scanning photoluminescence spectroscopy investigation of the ground and excited states at 80 and 300 K on InAs QDs inserted in In0.15 Ga0.85 As/Ga As QW structures and created at different QD growth temperatures. It is shown that investigated structures are characterized by the long range variation of an average QD size in QD ensemble across the wafer. This long range QD size inhomogeneity was used for investigation of the multi-excited state energy trend versus ground state energy (or QD sizes).

KW - InAs quantum dots

KW - Multi-excited states

KW - Photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=36649000676&partnerID=8YFLogxK

U2 - 10.1142/S0219581X07004912

DO - 10.1142/S0219581X07004912

M3 - Artículo

SN - 0219-581X

VL - 6

SP - 383

EP - 387

JO - International Journal of Nanoscience

JF - International Journal of Nanoscience

IS - 5

ER -

Ground and excited state photoluminescence mapping on InAs/InGaAs quantum dot structures

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Keywords

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