Glass doped with semiconductor nanoparticles for optical devices

E. Rodriguez, L. Ponce, M. Arronte, E. De Posada, G. Kellerman, C. L. César, L. C. Barbosa

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We report the fabrication of glass multilayer doped with semiconductor nanoparticles. The glass matrix was fabricated by Plasma Enhanced Chemical Deposition (PECVD using tetramethoxysilane (TMOS) as precursor. The RF power was supplied by a RF-150 TOKYO Hi-Power operating at 13.56 MHz and coupled to the RF electrodes through a matching box. The nanoparticles were grown by pulsed laser deposition (PLD) of a PbTe target using the second harmonic of a Q-Switched Quantel Nd:YAG laser in high purity inert gas atmosphere. The influence of gas and background pressure and in the nanoparticle size and size distribution is studied. The morphological properties of the nanostructured material were studied by means of High Resolution Transmission Electron Microscopy(HRTEM), grazing-incidence smallangleX-ray scattering (GISAXS)

Original languageEnglish
Title of host publicationSeventh Symposium Optics in Industry
DOIs
StatePublished - 2009
Event7th Symposium Optics in Industry, VII SOI - Guadalajara, Jalisco, Mexico
Duration: 11 Sep 200912 Sep 2009

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7499
ISSN (Print)0277-786X

Conference

Conference7th Symposium Optics in Industry, VII SOI
Country/TerritoryMexico
CityGuadalajara, Jalisco
Period11/09/0912/09/09

Keywords

  • Optical device
  • PECVD
  • Pulsed laser deposition
  • Quantum dots

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