Germanium profile, graduality and base doping level influences in the performance of SiGe HBT

Eloy Ramírez García; Nicolas Zerounian; Frédéric Anier; Mauro A.Enciso Aguilar; Benoît Barbalat; Pascal Chevalier; Alain Chantre

doi:10.1109/ISDRS.2007.4422469

Germanium profile, graduality and base doping level influences in the performance of SiGe HBT

Eloy Ramírez García, Nicolas Zerounian, Frédéric Anier, Mauro A.Enciso Aguilar, Benoît Barbalat, Pascal Chevalier, Alain Chantre

Escuela Superior de Ingeniería Mecánica y Eléctrica (ESIME), Unidad Zacatenco

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Original language	English
Title of host publication	2007 International Semiconductor Device Research Symposium, ISDRS
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	1424418917, 9781424418916
DOIs	https://doi.org/10.1109/ISDRS.2007.4422469
State	Published - 2007
Event	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States Duration: 12 Dec 2007 → 14 Dec 2007

Publication series

Name	2007 International Semiconductor Device Research Symposium, ISDRS

Conference

Conference	2007 International Semiconductor Device Research Symposium, ISDRS
Country/Territory	United States
City	College Park, MD
Period	12/12/07 → 14/12/07

Access to Document

10.1109/ISDRS.2007.4422469

Cite this

García, E. R., Zerounian, N., Anier, F., Aguilar, M. A. E., Barbalat, B., Chevalier, P., & Chantre, A. (2007). Germanium profile, graduality and base doping level influences in the performance of SiGe HBT. In 2007 International Semiconductor Device Research Symposium, ISDRS Article 4422469 (2007 International Semiconductor Device Research Symposium, ISDRS). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDRS.2007.4422469

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title = "Germanium profile, graduality and base doping level influences in the performance of SiGe HBT",

author = "Garc{\'i}a, {Eloy Ram{\'i}rez} and Nicolas Zerounian and Fr{\'e}d{\'e}ric Anier and Aguilar, {Mauro A.Enciso} and Beno{\^i}t Barbalat and Pascal Chevalier and Alain Chantre",

year = "2007",

doi = "10.1109/ISDRS.2007.4422469",

language = "Ingl{\'e}s",

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series = "2007 International Semiconductor Device Research Symposium, ISDRS",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2007 International Semiconductor Device Research Symposium, ISDRS",

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note = "2007 International Semiconductor Device Research Symposium, ISDRS ; Conference date: 12-12-2007 Through 14-12-2007",

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García, ER, Zerounian, N, Anier, F, Aguilar, MAE, Barbalat, B, Chevalier, P & Chantre, A 2007, Germanium profile, graduality and base doping level influences in the performance of SiGe HBT. in 2007 International Semiconductor Device Research Symposium, ISDRS., 4422469, 2007 International Semiconductor Device Research Symposium, ISDRS, Institute of Electrical and Electronics Engineers Inc., 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, United States, 12/12/07. https://doi.org/10.1109/ISDRS.2007.4422469

Germanium profile, graduality and base doping level influences in the performance of SiGe HBT. / García, Eloy Ramírez; Zerounian, Nicolas; Anier, Frédéric et al.
2007 International Semiconductor Device Research Symposium, ISDRS. Institute of Electrical and Electronics Engineers Inc., 2007. 4422469 (2007 International Semiconductor Device Research Symposium, ISDRS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Germanium profile, graduality and base doping level influences in the performance of SiGe HBT

AU - García, Eloy Ramírez

AU - Zerounian, Nicolas

AU - Anier, Frédéric

AU - Aguilar, Mauro A.Enciso

AU - Barbalat, Benoît

AU - Chevalier, Pascal

AU - Chantre, Alain

PY - 2007

Y1 - 2007

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U2 - 10.1109/ISDRS.2007.4422469

DO - 10.1109/ISDRS.2007.4422469

M3 - Contribución a la conferencia

AN - SCOPUS:44949172639

SN - 1424418917

SN - 9781424418916

T3 - 2007 International Semiconductor Device Research Symposium, ISDRS

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2007 International Semiconductor Device Research Symposium, ISDRS

Y2 - 12 December 2007 through 14 December 2007

ER -

García ER, Zerounian N, Anier F, Aguilar MAE, Barbalat B, Chevalier P et al. Germanium profile, graduality and base doping level influences in the performance of SiGe HBT. In 2007 International Semiconductor Device Research Symposium, ISDRS. Institute of Electrical and Electronics Engineers Inc. 2007. 4422469. (2007 International Semiconductor Device Research Symposium, ISDRS). doi: 10.1109/ISDRS.2007.4422469

Germanium profile, graduality and base doping level influences in the performance of SiGe HBT

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