Gallium nitride thin films as processed by several techniques: Their possible applications for PV-devices

R. Mendoza-Pérez; G. Contreras-Puente; M. López-López; G. Santana-Rodrígez; J. Aguilar-Hernández; E. Hernández-Cruz; N. Campos-Rivera; Mayahuel Ortega; V. Sánchez; A. Cantarero; J. M. Recio; K. Jones

doi:10.1109/PVSC.2011.6186008

Gallium nitride thin films as processed by several techniques: Their possible applications for PV-devices

R. Mendoza-Pérez, G. Contreras-Puente, M. López-López, G. Santana-Rodrígez, J. Aguilar-Hernández, E. Hernández-Cruz, N. Campos-Rivera, Mayahuel Ortega, V. Sánchez, A. Cantarero, J. M. Recio, K. Jones

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

We present in this work the characterization studies carried on GaN - thin films as processed by the Close Spaced Vapor Technique (CSVT), Laser Ablation (LA), and Molecular Beam Epitaxy (MBE), under particular growth parameters for each of the three techniques. The films characterization was performed by x-ray diffraction (X-RD), Photoluminescence (PL), Raman spectroscopy, optical transmission, energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). With these results an analysis of the samples was done, with an aim for a possible application of these thin films for PV-devices.

Translated title of the contribution	Películas delgadas de nitruro de galio procesadas por varias técnicas: sus posibles aplicaciones para dispositivos fotovoltaicos
Original language	English
Title of host publication	Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages	521-525
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2011.6186008
State	Published - 2011
Event	37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States Duration: 19 Jun 2011 → 24 Jun 2011

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Country/Territory	United States
City	Seattle, WA
Period	19/06/11 → 24/06/11

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10.1109/PVSC.2011.6186008

Cite this

Mendoza-Pérez, R., Contreras-Puente, G., López-López, M., Santana-Rodrígez, G., Aguilar-Hernández, J., Hernández-Cruz, E., Campos-Rivera, N., Ortega, M., Sánchez, V., Cantarero, A., Recio, J. M., & Jones, K. (2011). Gallium nitride thin films as processed by several techniques: Their possible applications for PV-devices. In Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 (pp. 521-525). Article 6186008 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2011.6186008

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title = "Gallium nitride thin films as processed by several techniques: Their possible applications for PV-devices",

abstract = "We present in this work the characterization studies carried on GaN - thin films as processed by the Close Spaced Vapor Technique (CSVT), Laser Ablation (LA), and Molecular Beam Epitaxy (MBE), under particular growth parameters for each of the three techniques. The films characterization was performed by x-ray diffraction (X-RD), Photoluminescence (PL), Raman spectroscopy, optical transmission, energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). With these results an analysis of the samples was done, with an aim for a possible application of these thin films for PV-devices.",

author = "R. Mendoza-P{\'e}rez and G. Contreras-Puente and M. L{\'o}pez-L{\'o}pez and G. Santana-Rodr{\'i}gez and J. Aguilar-Hern{\'a}ndez and E. Hern{\'a}ndez-Cruz and N. Campos-Rivera and Mayahuel Ortega and V. S{\'a}nchez and A. Cantarero and Recio, {J. M.} and K. Jones",

year = "2011",

doi = "10.1109/PVSC.2011.6186008",

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isbn = "9781424499656",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "521--525",

booktitle = "Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011",

note = "37th IEEE Photovoltaic Specialists Conference, PVSC 2011 ; Conference date: 19-06-2011 Through 24-06-2011",

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Mendoza-Pérez, R, Contreras-Puente, G, López-López, M, Santana-Rodrígez, G, Aguilar-Hernández, J, Hernández-Cruz, E, Campos-Rivera, N, Ortega, M, Sánchez, V, Cantarero, A, Recio, JM & Jones, K 2011, Gallium nitride thin films as processed by several techniques: Their possible applications for PV-devices. in Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011., 6186008, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 521-525, 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Seattle, WA, United States, 19/06/11. https://doi.org/10.1109/PVSC.2011.6186008

Gallium nitride thin films as processed by several techniques: Their possible applications for PV-devices. / Mendoza-Pérez, R.; Contreras-Puente, G.; López-López, M. et al.
Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011. 2011. p. 521-525 6186008 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Gallium nitride thin films as processed by several techniques

T2 - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011

AU - Mendoza-Pérez, R.

AU - Contreras-Puente, G.

AU - López-López, M.

AU - Santana-Rodrígez, G.

AU - Aguilar-Hernández, J.

AU - Hernández-Cruz, E.

AU - Campos-Rivera, N.

AU - Ortega, Mayahuel

AU - Sánchez, V.

AU - Cantarero, A.

AU - Recio, J. M.

AU - Jones, K.

PY - 2011

Y1 - 2011

N2 - We present in this work the characterization studies carried on GaN - thin films as processed by the Close Spaced Vapor Technique (CSVT), Laser Ablation (LA), and Molecular Beam Epitaxy (MBE), under particular growth parameters for each of the three techniques. The films characterization was performed by x-ray diffraction (X-RD), Photoluminescence (PL), Raman spectroscopy, optical transmission, energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). With these results an analysis of the samples was done, with an aim for a possible application of these thin films for PV-devices.

AB - We present in this work the characterization studies carried on GaN - thin films as processed by the Close Spaced Vapor Technique (CSVT), Laser Ablation (LA), and Molecular Beam Epitaxy (MBE), under particular growth parameters for each of the three techniques. The films characterization was performed by x-ray diffraction (X-RD), Photoluminescence (PL), Raman spectroscopy, optical transmission, energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). With these results an analysis of the samples was done, with an aim for a possible application of these thin films for PV-devices.

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SN - 9781424499656

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

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BT - Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011

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ER -

Mendoza-Pérez R, Contreras-Puente G, López-López M, Santana-Rodrígez G, Aguilar-Hernández J, Hernández-Cruz E et al. Gallium nitride thin films as processed by several techniques: Their possible applications for PV-devices. In Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011. 2011. p. 521-525. 6186008. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2011.6186008

Gallium nitride thin films as processed by several techniques: Their possible applications for PV-devices

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