TY - GEN
T1 - Full comparison between analytical results, electrical modeling and measurements for the noise behavior of a SiGe HBT
AU - Pacheco-Sanchez, Anibal
AU - Enciso-Aguilar, Mauro
AU - Rodriguez-Mendez, Luis
PY - 2010
Y1 - 2010
N2 - In this paper we proposed a model for describe noise in SiGe HBTs that is implemented in software ADS and analyzed through a rigorous method described by Hudec. Results for both, modeled and analytical results are compared between them and experimental results.
AB - In this paper we proposed a model for describe noise in SiGe HBTs that is implemented in software ADS and analyzed through a rigorous method described by Hudec. Results for both, modeled and analytical results are compared between them and experimental results.
UR - http://www.scopus.com/inward/record.url?scp=79952086072&partnerID=8YFLogxK
U2 - 10.1109/ANDESCON.2010.5632410
DO - 10.1109/ANDESCON.2010.5632410
M3 - Contribución a la conferencia
AN - SCOPUS:79952086072
SN - 9781424467419
T3 - 2010 IEEE ANDESCON Conference Proceedings, ANDESCON 2010
BT - 2010 IEEE ANDESCON Conference Proceedings, ANDESCON 2010
T2 - 2010 IEEE ANDESCON Conference, ANDESCON 2010
Y2 - 14 September 2010 through 17 September 2010
ER -