Formation of Si/SiOx interface and its influence on photoluminescence of Si nano-crystallites

F. G. Becerril-Espinoza; T. V. Torchynska; M. Morales Rodríguez; L. Khomenkova; L. V. Scherbina

doi:10.1016/S0026-2692(03)00120-4

Formation of Si/SiO_x interface and its influence on photoluminescence of Si nano-crystallites

F. G. Becerril-Espinoza, T. V. Torchynska, M. Morales Rodríguez, L. Khomenkova, L. V. Scherbina

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Photoluminescence (PL), PL excitation and atomic force microscopy investigations of porous silicon (PSi) have been done in as-prepared state and after 1.0 year storage in ambient air. In as-prepared state, PSi layers are characterised by two PL bands peaked at 1.70 and 2.00 eV. The complex analysing of the changes of PL parameters during the formation of the Si/SiO_x interface give possibility to make conclusion concerning the PL and PL excitation mechanisms for both PL bands in Si-nano-crystallites.

Original language	English
Pages (from-to)	759-761
Number of pages	3
Journal	Microelectronics Journal
Volume	34
Issue number	5-8
DOIs	https://doi.org/10.1016/S0026-2692(03)00120-4
State	Published - May 2003

Keywords

Nano-structures
Photoluminescence
Porous silicon

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10.1016/S0026-2692(03)00120-4

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title = "Formation of Si/SiOx interface and its influence on photoluminescence of Si nano-crystallites",

abstract = "Photoluminescence (PL), PL excitation and atomic force microscopy investigations of porous silicon (PSi) have been done in as-prepared state and after 1.0 year storage in ambient air. In as-prepared state, PSi layers are characterised by two PL bands peaked at 1.70 and 2.00 eV. The complex analysing of the changes of PL parameters during the formation of the Si/SiOx interface give possibility to make conclusion concerning the PL and PL excitation mechanisms for both PL bands in Si-nano-crystallites.",

keywords = "Nano-structures, Photoluminescence, Porous silicon",

author = "Becerril-Espinoza, {F. G.} and Torchynska, {T. V.} and Rodr{\'i}guez, {M. Morales} and L. Khomenkova and Scherbina, {L. V.}",

note = "Funding Information: This work was supported by CONACYT (Project 33427-U and International cooperation project Mexico, Ukraine), as well as CGPI, IPN Mexico and Ministry of Sciences and Education of Ukraine.",

year = "2003",

month = may,

doi = "10.1016/S0026-2692(03)00120-4",

language = "Ingl{\'e}s",

volume = "34",

pages = "759--761",

journal = "Microelectronics Journal",

issn = "0026-2692",

publisher = "Elsevier BV",

number = "5-8",

}

TY - JOUR

T1 - Formation of Si/SiOx interface and its influence on photoluminescence of Si nano-crystallites

AU - Becerril-Espinoza, F. G.

AU - Torchynska, T. V.

AU - Rodríguez, M. Morales

AU - Khomenkova, L.

AU - Scherbina, L. V.

N1 - Funding Information: This work was supported by CONACYT (Project 33427-U and International cooperation project Mexico, Ukraine), as well as CGPI, IPN Mexico and Ministry of Sciences and Education of Ukraine.

PY - 2003/5

Y1 - 2003/5

N2 - Photoluminescence (PL), PL excitation and atomic force microscopy investigations of porous silicon (PSi) have been done in as-prepared state and after 1.0 year storage in ambient air. In as-prepared state, PSi layers are characterised by two PL bands peaked at 1.70 and 2.00 eV. The complex analysing of the changes of PL parameters during the formation of the Si/SiOx interface give possibility to make conclusion concerning the PL and PL excitation mechanisms for both PL bands in Si-nano-crystallites.

AB - Photoluminescence (PL), PL excitation and atomic force microscopy investigations of porous silicon (PSi) have been done in as-prepared state and after 1.0 year storage in ambient air. In as-prepared state, PSi layers are characterised by two PL bands peaked at 1.70 and 2.00 eV. The complex analysing of the changes of PL parameters during the formation of the Si/SiOx interface give possibility to make conclusion concerning the PL and PL excitation mechanisms for both PL bands in Si-nano-crystallites.

KW - Nano-structures

KW - Photoluminescence

KW - Porous silicon

UR - http://www.scopus.com/inward/record.url?scp=0038519411&partnerID=8YFLogxK

U2 - 10.1016/S0026-2692(03)00120-4

DO - 10.1016/S0026-2692(03)00120-4

M3 - Artículo

AN - SCOPUS:0038519411

SN - 0026-2692

VL - 34

SP - 759

EP - 761

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 5-8

ER -

Formation of Si/SiO_x interface and its influence on photoluminescence of Si nano-crystallites

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