Floating gate MOSFET circuit design for a monolithic MEMS gas sensor

M. A. Reyes-Barranca, S. Mendoza-Acevedo, A. Ávila-García, J. L. González-Vidal, L. M. Flores-Nava

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Gas sensors based on various principles and configurations have been studied for several years. Some of them are based on resistance variation of sensing layers. On the other hand, floating-gate MOSFETs can modify its threshold voltage by means of a chemical reaction. Here a study is made to prove that the charge produced by such chemical reaction can affect the voltage upon the floating gate. An analysis of a reading circuit with an FG-MOS as the transducer is made, showing this approximation as a promising alternative for gas sensors. A very simple design can be made for fabrication of a monolithic gas sensing system, by using a standard technology, supported in a MEMS structure for thermal isolation purposes. In order to show feasibility of this idea, experimental data is obtained using a conventional MOSFET and an Fe 2O3 layer, showing that the system can be used as a gas sensor.

Original languageEnglish
Title of host publicationProceedings of the 22nd Symposium on Integrated Circuits and Systems Design, SBCCI 2009
DOIs
StatePublished - 2009
Externally publishedYes
Event22nd Symposium on Integrated Circuits and Systems Design, SBCCI 2009 - Natal, Brazil
Duration: 31 Aug 20093 Sep 2009

Publication series

NameProceedings of the 22nd Symposium on Integrated Circuits and Systems Design, SBCCI 2009

Conference

Conference22nd Symposium on Integrated Circuits and Systems Design, SBCCI 2009
Country/TerritoryBrazil
CityNatal
Period31/08/093/09/09

Keywords

  • FGMOS
  • Gas sensor
  • MEMS

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