Fault detection for SiC-Mosfet based on the behavior of gate signal

O. Climaco-Arvizu, L. Hernández-González, M. A. Rodríguez-Blanco

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

11 Scopus citations

Abstract

We present the design and simulation of a fault detection circuit applied to a Silicon Carbide Mosfet (SiC-Mosfet), fault detection is done by examining the behavior of gate signal. The most important aspects that have been made and are reported specifically: early detection, since the evaluation is done during the transient of turn-on, allowing early detection in the case of short-circuit, failure detection times small as which prevents to the spread to full system. To validate the system, this was designed and applied to failure detection to Boost-Converter with SiC-Mosfet, the simulation results to validate the robustness and reliability of the electronic system designed.

Original languageEnglish
Title of host publicationProceedings - SDEMPED 2015
Subtitle of host publicationIEEE 10th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages71-76
Number of pages6
ISBN (Electronic)9781479977437
DOIs
StatePublished - 21 Oct 2015
Event10th IEEE International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, SDEMPED 2015 - Guarda, Portugal
Duration: 1 Sep 20154 Sep 2015

Publication series

NameProceedings - SDEMPED 2015: IEEE 10th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives

Conference

Conference10th IEEE International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, SDEMPED 2015
Country/TerritoryPortugal
CityGuarda
Period1/09/154/09/15

Keywords

  • Analog circuits
  • DC-DC power converters
  • Electrical fault detection
  • Power MOSFET
  • SPICE
  • Silicon Carbide
  • Wide band gap semiconductors

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