Fault detection for IGBT using adaptive thresholds during the turn-on transient

Marco Antonio Rodriguez-Blanco; Amsi Vazquez-Perez; Leobardo Hernandez-Gonzalez; Victor Golikov; Jesus Aguayo-Alquicira; Manuel May-Alarcon

doi:10.1109/TIE.2014.2364154

Fault detection for IGBT using adaptive thresholds during the turn-on transient

Marco Antonio Rodriguez-Blanco, Amsi Vazquez-Perez, Leobardo Hernandez-Gonzalez, Victor Golikov, Jesus Aguayo-Alquicira, Manuel May-Alarcon

Escuela Superior de Ingeniería Mecánica y Eléctrica (ESIME), Unidad Culhuacán

Research output: Contribution to journal › Article › peer-review

92 Scopus citations

Abstract

This paper presents the analysis and design of an electronic failure detection system applied to the insulated gate bipolar transistor (IGBT), this proposal is based on the direct measurement of behavior of the gate signal during the turn-on transient. The failures by short-circuit and open-circuit devices only are considered in this paper. To achieve early detection, the IGBT gate signal behavior during turn-on transient is used and to increase the effectiveness of the detection and to tolerate the variations of input to system, adaptable thresholds have been added to the analog electronics circuit implemented. The experimental tests are presented in order to validate the proposed fault-detection technique.

Original language	English
Article number	6928460
Pages (from-to)	1975-1983
Number of pages	9
Journal	IEEE Transactions on Industrial Electronics
Volume	62
Issue number	3
DOIs	https://doi.org/10.1109/TIE.2014.2364154
State	Published - 1 Mar 2015

Keywords

Adaptable Signal Detection
Drives
Failure analysis
Fault Diagnosis
Insulated Gate Bipolar Transistors
Inverter
electronics circuit
threshold and Fault detection

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10.1109/TIE.2014.2364154

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title = "Fault detection for IGBT using adaptive thresholds during the turn-on transient",

abstract = "This paper presents the analysis and design of an electronic failure detection system applied to the insulated gate bipolar transistor (IGBT), this proposal is based on the direct measurement of behavior of the gate signal during the turn-on transient. The failures by short-circuit and open-circuit devices only are considered in this paper. To achieve early detection, the IGBT gate signal behavior during turn-on transient is used and to increase the effectiveness of the detection and to tolerate the variations of input to system, adaptable thresholds have been added to the analog electronics circuit implemented. The experimental tests are presented in order to validate the proposed fault-detection technique.",

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AU - Hernandez-Gonzalez, Leobardo

AU - Golikov, Victor

AU - Aguayo-Alquicira, Jesus

AU - May-Alarcon, Manuel

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AB - This paper presents the analysis and design of an electronic failure detection system applied to the insulated gate bipolar transistor (IGBT), this proposal is based on the direct measurement of behavior of the gate signal during the turn-on transient. The failures by short-circuit and open-circuit devices only are considered in this paper. To achieve early detection, the IGBT gate signal behavior during turn-on transient is used and to increase the effectiveness of the detection and to tolerate the variations of input to system, adaptable thresholds have been added to the analog electronics circuit implemented. The experimental tests are presented in order to validate the proposed fault-detection technique.

KW - Adaptable Signal Detection

KW - Drives

KW - Failure analysis

KW - Fault Diagnosis

KW - Insulated Gate Bipolar Transistors

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JO - IEEE Transactions on Industrial Electronics

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Fault detection for IGBT using adaptive thresholds during the turn-on transient

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Keywords

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