Fabrication and characterization of a PbTe quantum dots multilayer structure

E. Rodriguez, E. Jimenez, G. J. Jacob, A. A.R. Neves, C. L. Cesar, L. C. Barbosa

Research output: Contribution to journalConference articlepeer-review

24 Scopus citations

Abstract

Multilayer PbTe quantum dots (QDs) and SiO2 were grown by pulsed laser deposition (PLD) and Plasma enhanced chemical vapor deposition (PECVD) techniques. The crystalline structure, QD size and size dispersion were observed by high-resolution transmission electron microscopy (HRTEM) measurements. This technique allows one to grow PbTe QDs as small as 1.8 nm diameter and 0.6 nm size dispersion. The whole structure can be used in a Fabry-Perot cavity for an optical device operating at the mid-infrared region.

Original languageEnglish
Pages (from-to)361-365
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume26
Issue number1-4
DOIs
StatePublished - Feb 2005
Externally publishedYes
EventInternational Conference on Quantum Dots - Banff, Alberta, Canada
Duration: 10 May 200413 May 2004

Keywords

  • Pecvd
  • Pulsed laser deposition
  • Semiconductor quantum dots

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