Extraction noise transport time (τ) and its impact over the four noise parameters of advanced SiGe HBT

L. F. Luis-Pineda, E. Ramirez-Garcia, N. Zerounian, F. Aniel, M. A.Enciso Aguilar

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper introduces some results concerning the high frequency noise analysis, along with the noise transport time (r) extraction and its impact over the microwave noise performances of SiGe heterojunction bipolar transistors (HBT). Our methodology of noise analysis can be extended to investigate the impact of the technological variations of the base over the microwave noise performances of high speed SiGe HBTs.

Original languageEnglish
Title of host publicationCCE 2012 - 2012 9th International Conference on Electrical Engineering, Computing Science and Automatic Control
DOIs
StatePublished - 2012
Event2012 9th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2012 - Mexico City, Mexico
Duration: 26 Sep 201228 Sep 2012

Publication series

NameCCE 2012 - 2012 9th International Conference on Electrical Engineering, Computing Science and Automatic Control

Conference

Conference2012 9th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2012
Country/TerritoryMexico
CityMexico City
Period26/09/1228/09/12

Keywords

  • Microwave noise
  • SiGe HBT
  • noise transport time

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