Exciton related photoluminescence stimulation in SiC nanocrystals

T. Torchynska; G. Polupan

doi:10.1016/j.spmi.2008.09.012

Exciton related photoluminescence stimulation in SiC nanocrystals

T. Torchynska, G. Polupan

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The paper presents the results of porous SiC characterization using scanning electron microscopy (SEM), X-ray diffraction (XRD) and photoluminescence spectroscopy techniques. XRD study shows the investigated porous 6H-SiC layers contain inclusions of 4H-SiC and 15R-SiC polytypes as well as the amorphous graphite phase. Photoluminescence study of PSiC layers with different thicknesses and SiC NC sizes reveals the intensity stimulation for exciton and defect-related PL bands. The intensity stimulation of defect-related PL bands is due to the increase, at the etching process, of the concentration of surface defects, apparently to deal with carbon. The intensity enhancement for exciton-related PL bands is attributed to the exciton recombination rate increasing due to the realization of exciton confinement and exciton-polariton effects in big size SiC NCs of different polytypes (6H-PSiC with inclusions of 15R- and 4H-PSiC).

Original language	English
Pages (from-to)	222-227
Number of pages	6
Journal	Superlattices and Microstructures
Volume	45
Issue number	4-5
DOIs	https://doi.org/10.1016/j.spmi.2008.09.012
State	Published - Apr 2009

Keywords

Emission
Exciton-polariton effect
Excitonic confinement
SiC nanocrystals

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10.1016/j.spmi.2008.09.012

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title = "Exciton related photoluminescence stimulation in SiC nanocrystals",

abstract = "The paper presents the results of porous SiC characterization using scanning electron microscopy (SEM), X-ray diffraction (XRD) and photoluminescence spectroscopy techniques. XRD study shows the investigated porous 6H-SiC layers contain inclusions of 4H-SiC and 15R-SiC polytypes as well as the amorphous graphite phase. Photoluminescence study of PSiC layers with different thicknesses and SiC NC sizes reveals the intensity stimulation for exciton and defect-related PL bands. The intensity stimulation of defect-related PL bands is due to the increase, at the etching process, of the concentration of surface defects, apparently to deal with carbon. The intensity enhancement for exciton-related PL bands is attributed to the exciton recombination rate increasing due to the realization of exciton confinement and exciton-polariton effects in big size SiC NCs of different polytypes (6H-PSiC with inclusions of 15R- and 4H-PSiC).",

keywords = "Emission, Exciton-polariton effect, Excitonic confinement, SiC nanocrystals",

author = "T. Torchynska and G. Polupan",

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AU - Torchynska, T.

AU - Polupan, G.

PY - 2009/4

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N2 - The paper presents the results of porous SiC characterization using scanning electron microscopy (SEM), X-ray diffraction (XRD) and photoluminescence spectroscopy techniques. XRD study shows the investigated porous 6H-SiC layers contain inclusions of 4H-SiC and 15R-SiC polytypes as well as the amorphous graphite phase. Photoluminescence study of PSiC layers with different thicknesses and SiC NC sizes reveals the intensity stimulation for exciton and defect-related PL bands. The intensity stimulation of defect-related PL bands is due to the increase, at the etching process, of the concentration of surface defects, apparently to deal with carbon. The intensity enhancement for exciton-related PL bands is attributed to the exciton recombination rate increasing due to the realization of exciton confinement and exciton-polariton effects in big size SiC NCs of different polytypes (6H-PSiC with inclusions of 15R- and 4H-PSiC).

AB - The paper presents the results of porous SiC characterization using scanning electron microscopy (SEM), X-ray diffraction (XRD) and photoluminescence spectroscopy techniques. XRD study shows the investigated porous 6H-SiC layers contain inclusions of 4H-SiC and 15R-SiC polytypes as well as the amorphous graphite phase. Photoluminescence study of PSiC layers with different thicknesses and SiC NC sizes reveals the intensity stimulation for exciton and defect-related PL bands. The intensity stimulation of defect-related PL bands is due to the increase, at the etching process, of the concentration of surface defects, apparently to deal with carbon. The intensity enhancement for exciton-related PL bands is attributed to the exciton recombination rate increasing due to the realization of exciton confinement and exciton-polariton effects in big size SiC NCs of different polytypes (6H-PSiC with inclusions of 15R- and 4H-PSiC).

KW - Emission

KW - Exciton-polariton effect

KW - Excitonic confinement

KW - SiC nanocrystals

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DO - 10.1016/j.spmi.2008.09.012

M3 - Artículo

SN - 0749-6036

VL - 45

SP - 222

EP - 227

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 4-5

ER -

Exciton related photoluminescence stimulation in SiC nanocrystals

Abstract

Keywords

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